SS8550
SS8550
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to SS8050
• Collector Current: I
C
=1.5A
• Collector Power Dissipation: P
C
=2W (T
C
=25°C)
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-40
-25
-6
-1.5
1
150
-65 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -2mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -35V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
= -1V, I
C
= -5mA
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
I
C
= -800mA, I
B
= -80mA
I
C
= -800mA, I
B
= -80mA
V
CE
= -1V, I
C
= -10mA
V
CB
= -10V, I
E
=0
f=1MHz
V
CE
= -10V, I
C
= -50mA
100
45
85
40
170
160
80
-0.28
-0.98
-0.66
15
200
Min.
-40
-25
-6
-100
-100
300
-0.5
-1.2
-1.0
V
V
V
pF
MHz
Typ.
Max.
Units
V
V
V
nA
nA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain Bandwidth Product
h
FE
Classification
Classification
h
FE2
B
85 ~ 160
C
120 ~ 200
D
160 ~ 300
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
SS8550
Typical Characteristics
-0.5
1000
V
CE
= -1V
I
B
=-4.0mA
I
C
[mA], COLLECTOR CURRENT
-0.4
I
B
=-3.5mA
I
B
=-3.0mA
h
FE
, DC CURRENT GAIN
100
-0.3
I
B
=-2.5mA
I
B
=-2.0mA
-0.2
I
B
=-1.5mA
I
B
=-1.0mA
10
-0.1
I
B
=-0.5mA
-0.4
-0.8
-1.2
-1.6
-2.0
1
-0.1
-1
-10
-100
-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10000
-100
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
=10I
B
V
CE
= -1V
-1000
I
C
[mA], COLLECTOR CURRENT
-100
-1000
-10
V
BE(sat)
-100
-1
V
CE(sat)
-10
-0.1
-1
-10
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
f=1MHz
I
E
=0
V
CE
=-10V
C
ob
[pF], CAPACITANCE
10
100
1
-1
-10
-100
-1000
10
-1
-10
-100
-1000
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
Embedded System
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