2SK3601-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI
POWER
N-CHANNEL SILICON
POWER MOS FET
MOSFET
OUT VIEW
Outline Drawings
(mm)
外½寸法図
Fig.1
Ｐ矢視図参照
MARKING
表 示 内 容
Fig.1
Ｐ矢視図
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
DIMENSIONS ARE IN MILLIMETERS.
MARKING
Trademark
Note:1. Dimension shown in ( ) is
reference values.
注）１.（ ）内寸法は参考値とする。
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DSX *5
I
D
Tc=25°C
Ta=25°C
I
D(puls]
V
GS
I
AS *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Tc=25°C
Ta=25°C
T
ch
T
stg
Ratings
100
70
±20
±4.4
±80
±30
20
227
20
5
50
2.4 **
+150
-55 to +150
Unit
V
V
A
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
表示内容
商標
Special
specification
for customer
CONNECTION
11 G : : Gate
G Gate
結線図
S1 : : Source1
22 S1 Source1
33 S2 : : Source2
S2 Source2
44 D : : Drain
G
D Drain
S1
S2
D
特殊品記号
Lot No.
ロットNo.
Type name
½名
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
** Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
*1 L=681µH, Vcc=48V
*2 Tch< 150°C *3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
=
=
=
=
< 100V
*4 V
DS
=
*5 V
GS
=-30V
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=100V V
GS
=0V
V
DS
=80V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=10A V
GS
=10V
I
D
=10A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=10A
V
GS
=10V
R
GS
=10
Ω
V
CC
=50V
I
D
=20A
V
GS
=10V
L=100µH T
ch
=25°C
I
F
=20A V
GS
=0V T
ch
=25°C
I
F
=20A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
10
47
12
730
190
12
12
3.8
23
8.5
22
9
6
1.10
65
0.17
Min.
100
3.0
Typ.
Max.
5.0
25
250
100
62
1095
285
18
18
6
35
13
33
13.5
9
1.65
Units
V
V
µA
nA
mΩ
S
pF
6
ns
nC
20
A
V
ns
µC
Thermalcharacteristics
Symbol
Test Conditions
R
th(ch-c)
channel to case
Thermal resistance
R
th(ch-a)
channel to ambient
R
th(ch-a) **
channel to ambient
2
** Surface mounted on 1000mm , t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
Item
Min.
Typ.
Max.
2.5
87.0
52.0
Units
°C/W
°C/W
www.fujielectric.co.jp/denshi/scd
1
2SK3601-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
5
FUJI POWER MOSFET
70
Allowable Power Dissipation
PD=f(Tc)
Surface mounted on
1000mm ,t=1.6mm FR-4 PCB
2
60
4
50
3
(Drain pad area : 500mm )
2
40
PD [W]
30
PD [W]
0
25
50
75
100
125
150
2
20
1
10
0
0
0
25
50
75
100
125
150
Tc [
°
C]
Tc [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=20A
300
80
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
20V
250
60
200
10V
EAV [mJ]
ID [A]
150
40
8V
7.5V
100
20
50
7.0V
6.5V
6.0V
VGS=5.5V
0
0
25
50
75
100
125
150
0
0
2
4
6
8
10
12
starting Tch [
°
C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
100
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
10
10
ID[A]
1
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
0.1
1
10
100
VGS[V]
gfs [S]
ID [A]
2
2SK3601-01
FUJI POWER MOSFET
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.18
VGS=
5.5V 6.0V
0.15
6.5V
7.0V
7.5V
8V
150
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=10A,VGS=10V
125
RDS(on) [
Ω
]
0.12
RDS(on) [ m
Ω
]
100
0.09
10V
0.06
20V
0.03
75
max.
50
typ.
25
0.00
0
10
20
30
40
50
60
0
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
7.0
6.5
6.0
5.5
5.0
max.
10
12
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=20A, Tch=25°C
VGS(th) [V]
4.5
VGS [V]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
8
6
4
2
0
0
Vcc= 50V
10
20
30
40
Tch [
°
C]
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10
1
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
0
Ciss
10
C [nF]
Coss
10
-1
IF [A]
1
2
Crss
10
-2
10
-1
10
0
10
1
10
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
3
2SK3601-01
Typical Switching Characteristics vs. ID
10
3
FUJI POWER MOSFET
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
100
90
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
tf
10
2
Rth(ch-a) [
°
C/W]
80
70
60
50
40
30
t [ns]
td(off)
td(on)
10
1
tr
20
10
10
0
0
-1
10
10
0
10
1
10
2
0
1000
2000
3000
2
4000
5000
ID [A]
Drain Pad Area [mm ]
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):Duty=0
10
0
Zth(ch-c) [
°
C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25°C. Vcc=48V
10
2
Avalanche current I
AV
[A]
10
1
Single Pulse
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
4
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