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BC640ZL1G

Description
Bipolar Transistors - BJT 500mA 80V PNP
CategoryDiscrete semiconductor    The transistor   
File Size53KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC640ZL1G Overview

Bipolar Transistors - BJT 500mA 80V PNP

BC640ZL1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-92
package instructionLEAD FREE, CASE 29-11, TO-226, 3 PIN
Contacts3
Manufacturer packaging code29-11
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time1 week
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
BC638, BC640, BC640−16
High Current Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC638
BC640
Collector-Base Voltage
BC638
BC640
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
−55 to +150
W
mW/°C
°C
mW
mW/°C
1
2
3
V
CBO
−60
−80
−5.0
−0.5
Vdc
Adc
TO−92
CASE 29
STYLE 14
Symbol
V
CEO
−60
−80
Vdc
Value
Unit
Vdc
3
BASE
1
EMITTER
MARKING DIAGRAMS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
6x
AYWW
G
G
BC64
0−16
AYWW
G
G
BC6x
= Device Code
x = 3 or 4
BC640−16 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 2
Publication Order Number:
BC638/D

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Reach Compliance Code unknown not_compliant not_compliant not_compliant unknown
Is it lead-free? Lead free Contains lead - Contains lead -
Maker ON Semiconductor - ON Semiconductor ON Semiconductor -
Parts packaging code TO-92 - TO-92 TO-92 TO-92
package instruction LEAD FREE, CASE 29-11, TO-226, 3 PIN - CYLINDRICAL, O-PBCY-T3 CASE 29-11, TO-226, 3 PIN CYLINDRICAL, O-PBCY-T3
Contacts 3 - 3 3 3
Manufacturer packaging code 29-11 - CASE 29-11 29-11 CASE 29-11
ECCN code EAR99 - EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A - 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 80 V - 60 V 80 V 60 V
Configuration SINGLE - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 - 40 40 40
JEDEC-95 code TO-92 - TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 - O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e1 - e0 e0 e1
Number of components 1 - 1 1 1
Number of terminals 3 - 3 3 3
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND - ROUND ROUND ROUND
Package form CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 - 240 240 260
Polarity/channel type PNP - PNP PNP PNP
Maximum power dissipation(Abs) 1.5 W - 0.8 W 0.8 W 1.5 W
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount NO - NO NO NO
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM - BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 - 30 30 40
Transistor component materials SILICON - SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz - 150 MHz 150 MHz 150 MHz
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