NTP75N06L, NTB75N06L
Power MOSFET
75 Amps, 60 Volts, Logic
Level
N−Channel TO−220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
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75 AMPERES, 60 VOLTS
R
DS(on)
= 11 mW
N−Channel
D
•
Pb−Free Packages are Available
Typical Applications
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
4
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
p
v10
ms)
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10
ms)
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc, L = 0.3 mH
I
L(pk)
= 75 A, V
DS
= 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
I
D
I
D
I
DM
P
D
75
50
225
214
1.4
2.4
−55 to
+175
844
Adc
Apk
W
W/°C
W
°C
mJ
NTP75N06L
AYWW
1
Gate
2
Drain
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
3
Source
1
Gate
75N06LG
AYWW
Symbol
V
DSS
V
DGR
V
GS
V
GS
Value
60
60
"20
"15
Unit
Vdc
Vdc
Vdc
1
2
TO−220AB
CASE 221A
STYLE 5
1
2
3
D
2
PAK
CASE 418B
STYLE 2
4
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
T
J
, T
stg
E
AS
°C/W
R
qJC
R
qJA
T
L
0.7
62.5
260
°C
2
Drain
3
Source
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 1
Publication Order Number:
NTP75N06L/D
NTP75N06L, NTB75N06L
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current (V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 37.5 Adc)
Static Drain−to−Source On−Voltage (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 75 Adc)
(V
GS
= 5.0 Vdc, I
D
= 37.5 Adc, T
J
= 150°C)
Forward Transconductance (Note 2) (V
DS
= 15 Vdc, I
D
= 37.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 48 Vdc, I
D
= 75 Adc,
V
GS
= 5.0 Vdc) (Note 2)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
Reverse Recovery Time
(I
S
= 75 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 2)
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
(I
S
= 75 Adc, V
GS
= 0 Vdc) (Note 2)
(I
S
= 75 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
t
rr
t
a
t
b
Q
RR
−
−
−
−
−
−
1.0
0.9
70
43
27
0.16
1.15
−
−
−
−
−
mC
Vdc
ns
(V
DD
= 30 Vdc, I
D
= 75 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1
W)
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
22
265
113
170
66
9.0
47
32
370
160
240
92
−
−
nC
ns
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
3122
1029
276
4370
1440
390
pF
V
GS(th)
1.0
−
R
DS(on)
−
V
DS(on)
−
−
g
FS
−
0.75
0.61
55
0.99
−
−
mhos
9.0
11
Vdc
1.58
6.0
2.0
−
Vdc
mV/°C
mW
V
(BR)DSS
60
−
I
DSS
−
−
I
GSS
−
−
−
−
10
100
±100
nAdc
72
74
−
−
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
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2
NTP75N06L, NTB75N06L
160
I
D
, DRAIN CURRENT (AMPS)
140
120
100
80
60
40
V
GS
= 3 V
20
0
0
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
= 7 V
V
GS
= 8 V
V
GS
= 3.5 V
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 6 V
V
GS
= 4 V
160
I
D
, DRAIN CURRENT (AMPS)
140
120
100
80
60
40
20
0
1.4
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
1.8
2.2
2.6
3
3.4
3.8
4.2
4.6
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
GS
= 4.5 V
V
DS
w
10 V
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.02
V
GS
= 5 V
0.016
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.02
V
GS
= 10 V
0.016
T
J
= 100°C
0.012
T
J
= 25°C
0.008
0.012
T
J
= 100°C
T
J
= −55°C
0.008
T
J
= 25°C
T
J
= −55°C
0.004
0
20
40
60
80
100
120
I
D
, DRAIN CURRENT (AMPS)
0.004
0
20
40
60
80
100
120
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
175
0
I
D
= 37.5 A
V
GS
= 5 V
I
DSS
, LEAKAGE (nA)
10000
100000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
100
T
J
= 100°C
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTP75N06L, NTB75N06L
12000
V
DS
= 0 V
10000
C, CAPACITANCE (pF)
C
iss
8000
6000
4000
2000
C
rss
0
10
5
V
GS
0 V
DS
5
10
15
20
25
C
rss
C
iss
C
oss
V
GS
= 0 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
5
Q
1
4
3
2
1
0
I
D
= 75 A
T
J
= 25°C
0
10
20
30
40
50
60
70
Q
2
Q
T
V
GS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
I
S
, SOURCE CURRENT (AMPS)
V
DS
= 30 V
I
D
= 75 A
V
GS
= 5 V
t
r
t
f
80
70
60
50
40
30
20
10
0
0.6
V
GS
= 0 V
T
J
= 25°C
t, TIME (ns)
100
t
d(off)
10
1
t
d(on)
10
R
G
, GATE RESISTANCE (W)
100
0.64 0.68 0.72 0.76
0.8
0.84 0.86 0.92 0.96
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variations
vs. Gate Resistance
1000
I
D
, DRAIN CURRENT (AMPS)
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
Figure 10. Diode Forward Voltage vs. Current
V
GS
= 15 V
SINGLE PULSE
T
C
= 25°C
10
ms
I
D
= 75 A
800
100
100
ms
1 ms
10 ms
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
1
dc
600
400
10
200
10
100
0
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTP75N06L, NTB75N06L
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
0.001
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
t, TIME (ms)
0.1
P
(pk)
R
qJC
(t) = r(t) R
qJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
qJC
(t)
1.0
10
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTP75N06L
NTB75N06L
NTB75N06LG
NTB75N06LT4
NTB75N06LT4G
Package
TO−220AB
D
2
PAK
D
2
PAK
(Pb−Free)
D
2
PAK
D
2
PAK
(Pb−Free)
Shipping
†
50 Units / Rail
50 Units / Rail
50 Units / Rail
800 Units / Tape & Reel
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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