PHOTODIODE
InGaAs PIN photodiode
G8376 series
Standard type
InGaAs PIN photodiodes are NIR (near infrared) detectors that feature high-speed response and low noise. Various active area sizes are
provided to meet wide applications.
Features
Applications
l
Low noise, low dark current
l
Low terminal capacitance
l
3-pin TO-18 package
l
NIR (near infrared) photometry
l
Optical communication
s
Specifications / Absolute maximum ratings
Active area
(mm)
φ0.04
φ0.08
φ0.3
φ0.5
Absolute maximum ratings
Operating
Reverse
Storage
temperature
voltage
temperature
Topr
V
R
Tstg
(V)
(°C)
(°C)
Type No.
Window material
Package
G8376-01
G8376-02
G8376-03
G8376-05
B orosilicate glass
with anti-reflective
coating (optimized
for 1.55 µ m peak)
TO-18
20
-40 to +85
-55 to +125
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Peak
Spectral sensitivity
response wavelength
range
λp
(µm)
G8376-01
G8376-02
G8376-03
G8376-05
* V
R
=5 V
0.9 to 1.7
(µm)
1.55
T er minal
Cut-off
Shunt
frequency capacitance
NEP
resistance
D
∗
fc
Ct
Rsh
λ=λp
λ=λp
V
R
=2 V
V
R
=5 V
V
R
=10 mV
f=1 MHz
R
L
=50
Ω
1.3 µm
λ=λp
Min. Typ. Min. Typ. Typ. Max.
-3 dB
(c m· Hz
1/2
/ W) (W/Hz
1/2
)
(A/W) (A/W) (A/W) (A/W) (nA) (nA)
(MHz)
(pF)
(MΩ)
0.06 0.3
3000
0.5
10000
2 × 10
-15
0.08 0.4
2000
1
8000
2 × 10
-15
12
0.8 0.9 0.85 0.95
5 × 10
400 *
5
1000
0.3 1.5
4 × 10
-15
200 *
12
300
0.5 2.5
8 × 10
-15
Photo
sensitivity
S
Dark
current
I
D
V
R
=5 V
Type No.
G8376 series may be damaged by Electro Static Discharge, etc. Be carefull when using G8376 series.
1
InGaAs PIN photodiode
s
Spectral response
1
(Typ. Ta=25 ˚C)
G8376 series
(Typ. Ta=25
˚C
)
s
Photo sensitivity temperature
characteristic
2
(Typ. Ta=25
˚C
)
s
Dark current vs. reverse voltage
10 nA
TEMPERATURE COEFFICIENT (%/˚C)
PHOTO SENSITIVITY (A/W)
1 nA
G8376-03
G8376-05
1
DARK CURRENT
G8376-02
100 pA
G8376-01
10 pA
0.5
0
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-1
0.8
1.0
1.2
1.4
1.6
1.8
1 pA
0.01
0.1
1
10
100
WAVELENGTH (µm)
KIRDB0002EB
WAVELENGTH (µm)
KIRDB0042EA
REVERSE VOLTAGE (V)
KIRDB0249EA
s
Terminal capacitance vs.
reverse voltage
1 nF
(Typ. Ta=25
˚C
, f=1 MHz)
s
Shunt resistance vs. ambient
temperature
100 GΩ
(Typ. V
R
=10 mV)
G8376-01
G8376-02
10 GΩ
G8376-05
G8376-03
10 pF
TERMINAL CAPACITANCE
SHUNT RESISTANCE
100 pF
1 GΩ
100 MΩ
G8376-03
G8376-05
G8376-02
1 pF
G8376-01
100 fF
0.01
10 MΩ
0.1
1
10
100
1 MΩ
-40
-20
0
20
40
60
80
100
REVERSE VOLTAGE (V)
KIRDB0250EA
AMBIENT TEMPERATURE (˚C)
KIRDB0251EA
s
Dimensional outline (unit: mm)
5.4 ± 0.2
4.7 ± 0.1
WINDOW
3.0 ± 0.1
2.6 ± 0.2
0.45
LEAD
2.5 ± 0.2
CASE
KIRDA0150EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
13 MIN.
PHOTOSENSITIVE
SURFACE
3.7 ± 0.2
Cat. No. KIRD1051E0
May 2006 DN
2
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