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TP0101K-T1-GE3

Description
MOSFET 20V 0.58A 0.35W 650mohm @ 4.5V
CategoryDiscrete semiconductor    The transistor   
File Size122KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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TP0101K-T1-GE3 Overview

MOSFET 20V 0.58A 0.35W 650mohm @ 4.5V

TP0101K-T1-GE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)0.58 A
Maximum drain current (ID)0.58 A
Maximum drain-source on-resistance0.65 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
TP0101K
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
V
DS
(V)
- 20
R
DS(on)
(Ω)
0.65 at V
GS
= - 4.5 V
0.85 at V
GS
= - 2.5 V
I
D
(A)
e
- 0.58
- 0.5
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET
®
Power MOSFET
• ESD Protected: 3000 V
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems, DC/DC Converters
• Power Supply Converter Circuits
• Load/Power Switching-Cell Phones, Pagers
TO-236
(SOT-23)
Marking Code:
K4ywl
G
1
K4 = Part
Number
Code for TP0101K
3
S
2
D
y
= Year Code
w
= Week Code
l
= Lot Traceability
G
100
Ω
D
Top
View
S
Ordering Information: TP0101K-T1-E3 (Lead (Pb)-free)
TP0101K-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
b
Pulsed Drain Current
a
Symbol
V
DS
V
GS
T
A
= 25 °C
T
A
= 70 °C
I
D
I
DM
I
S
T
A
= 25 °C
T
A
= 70 °C
P
D
T
J
, T
stg
Limit
- 20
±8
- 0.58
- 0.46
-2
- 0.3
0.35
0.22
- 55 to 150
Unit
V
A
Continuous Source-Drain (Diode Current)
b
Power Dissipation
b
Operating Junction and Storage Temperature Range
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t
10 s.
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance, Junction-to-Ambient
b
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t
10 s.
Document Number: 72692
S-83053-Rev. B, 29-Dec-08
www.vishay.com
1
Symbol
R
thJA
Limits
357
Unit
°C/W
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