product family. Using the ultra-high density propri-
etary TrenchDMOS technology, this product
demonstrates high power handling and small size.
AAT7126
Features
•
•
•
V
DS(MAX)
= 30V
I
D(MAX)
1
= 6.8A @ 25°C
Low R
DS(ON)
:
• 26 mΩ @V
GS
= 10V
• 41 mΩ @ V
GS
= 4.5V
Applications
•
•
•
•
Battery-powered portable equipment
Laptop computers
Desktop computers
DC/DC converters
Dual SOP-8 Package
Preliminary Information
Top View
D1
8
D1
7
D2
6
D2
5
1
S1
2
G1
3
S2
4
G2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25°C unless otherwise noted)
Value
30
±20
±6.8
±5.4
±24
1.7
2.0
1.25
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
A
= 25°C
T
A
= 70°C
Pulsed Drain Current
Continuous Source Current (Source-Drain Diode)
1
T
A
= 25°C
Maximum Power Dissipation
1
T
A
= 70°C
Operating Junction and Storage Temperature Range
A
W
°C
Thermal Characteristics
Symbol
R
θJA
R
θJA2
R
ΘJC
Description
Typical Junction-to-Ambient steady state, one FET on
Industry Standard Junction-to-Ambient Figure, t < 10 sec.
Typical Junction-to-Case, one FET on
Value
100
62.5
35
Units
°C/W
°C/W
°C/W
7126.2002.10.0.9
1
30V N-Channel Power MOSFET
Electrical Characteristics
Symbol
Description
(T
J
=25°C unless otherwise noted)
Conditions
V
GS
=0V, I
D
=250µA
V
GS
=10V, I
D
=6.8A
V
GS
=4.5V, I
D
=5.4A
V
GS
=10V ,V
DS
=5V (Pulsed)
V
GS
=V
DS
, I
D
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=0V,V
DS
=30V
V
GS
=0V,V
DS
=30V, T
J
=70°C
V
DS
=5V, I
D
=6.8A
V
DS
=15V, I
D
=6.8A, V
GS
=5V
V
DS
=15V, I
D
=6.8A, V
GS
=10V
V
DS
=15V, I
D
=6.8A, V
GS
=10V
V
DS
=15V, I
D
=6.8A, V
GS
=10V
V
DD
=15V, V
GS
=10V, R
D
=3Ω, R
G
=6Ω
V
DD
=15V, V
GS
=10V, R
D
=3Ω, R
G
=6Ω
V
DD
=15V, V
GS
=10V, R
D
=3Ω, R
G
=6Ω
V
DD
=15V, V
GS
=10V, R
D
=3Ω, R
G
=6Ω
2
AAT7126
Min
30
Typ
Max
Units
V
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage
R
DS(ON)
I
D(ON)
V
GS(th)
I
GSS
I
DSS
Drain-Source ON-Resistance
On-State Drain Current
2
Gate Threshold Voltage
Gate-Body Leakage Current
Drain Source Leakage Current
2
19.5
32
24
1.0
26
41
mΩ
A
V
nA
µA
S
±100
1
5
14
8.6
16
2.5
2.8
3
3
12
6
13
24
g
fs
Forward Transconductance
2
Dynamic Characteristics
3
Q
G
Total Gate Charge
Q
GT
Total Gate Charge
Q
GS
Gate-Source Charge
Q
GD
Gate-Drain Charge
t
D(ON)
Turn-ON Delay
t
R
Turn-ON Rise Time
t
D(OFF)
Turn-OFF Delay
t
F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
I
S
Continuous Diode Current
Note 2: Pulse test: pulse width = 300µs
nC
nC
nC
nC
ns
ns
ns
ns
V
A
V
GS
=0, I
S
=1.7A
1.2
1.7
Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width.
Note 3: Guaranteed by design. Not subjected to production testing.
2
7126.2002.10.0.9
30V N-Channel Power MOSFET
Typical Characteristics
(T
J
= 25ºC unless otherwise noted)
Forward Characteristics
R
DS(ON)
/ R
DS(ON)
at gate = 10 V
25
20
15
10
5
0
0
1
2
3
4
5
AAT7126
Normalized R
DS(ON)
3
10V
6V
5V
4.5V
4V
3.5V
3V
2V
3.5V
4V
4.5V
2
I
D
(A)
1
5V
0
0
5
10
15
6V
10V
20
25
V
D
(V)
I
D
(A)
R
DS(ON)
vs. V
G
100
25
Transfer
5A
80
20
R
DS(ON)
(mΩ)
10A
15A
I
D
(A)
6
8
10
60
40
20
0
0
2
4
15
10
5
0
0
1
2
3
4
5
V
G
(V)
V
G
(V)
Source to Drain Voltage
100
10
8
10
Gate Charge Characteristics
Gate Voltage (V)
0.6
0.8
1
1.2
I
SD
(A)
6
4
2
0
0
4
8
12
16
20
1
0.1
0.4
V
SD
(V)
Gate Charge (nC)
7126.2002.10.0.9
3
30V N-Channel Power MOSFET
Ordering Information
Package
SOP-8
Marking
7126
Part Number (Tape and Reel)
AAT7126IAS-T1
AAT7126
Note: Sample stock is generally held on all part numbers listed in
BOLD.
Package Information
SOP-8
3.90
±
0.10
4.90
±
0.10
6.00
±
0.20
0.375
±
0.125
1.55
±
0.20
45°
0.175
±
0.075
4°
±
4°
0.235
±
0.045
0.825
±
0.445
0.42
±
0.09
×
8
1.27 BSC
All dimensions in millimeters.
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
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