www.fairchildsemi.com
FS6S-SERIES
FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Fairchild Power Switch(SPS)
Features
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Wide Operating Frequency Range Up to 150Khz
Lowest Cost SMPS Solution
Lowest External Components
Low Start-up Current (max:170uA)
Low Operating Current (max:15mA)
Internal High Voltage SenseFET
Built-in Auto-Restart Circuit
Over Voltage Protection (Auto Restart Mode)
Over Load Protection (Auto Restart Mode)
Over Current Protection With Latch Mode
Internal Thermal Protection With Latch Mode
Pulse By Pulse Over Current Limiting
Internal Burst Mode Controller for Stand-by Mode
Under Voltage Lockout With Hysteresis
External Sync. Terminal
TO-3P-5L
1
TO-220F-5L
1
1. Drain 2. Gnd 3. V
CC
4. FeedBack 5. Sync.
Internal Block Diagram
3
Vpp=5.8/7.2V
1
-
OSC
SYNC
Burst Mode Coltroller
VFB
VREF
Internal
Bias
Vref
5
+
-
+
UVLO
-
+
-
+
S
R
Roff
-
PWM
_
QB
Vth=1V
Ron
VCC
Vth=11/12V
4
2.5R
Ifb
-
R
+
Vfb Offset
Idelay
VREF
VCC
Rsense
+
-
Vth=7.5V
VCC
OLP
S
Uvlo Reset
(VCC=9V)
OCL
Filter
(130nsec)
+
-
Vth=1V
2
+
-
OVP
Q
Q
S
R
Power-on Reset
(VCC=6.5V)
TSD
(Tj=160℃)
R
Vth=30V
Rev.1.0.1
©2001 Fairchild Semiconductor Corporation
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Absolute Maximum Ratings
(Ta=25°C,
unless otherwise specified)
Characteristic
Symbol
BV
PKG
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
SS
P
D
(Watt H/S)
Total Power Dissipation
Derating
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
J
T
A
T
STG
Value
FS6S0965RT
650
650
±30
36
9
7.2
25(950)
35
-0.3 to V
CC
-0.3 to 10
FS6S0965RT
FS6S0965R
FS6S0965RT
FS6S0965R
+160
-25 to +85
-55 to +150
48
170
0.385
1.33
3500
Unit
V
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W /
°C
°C
°C
°C
FS6S0965RT/FS6S0965R
Drain to PKG Breakdown Voltage
Maximum Drain Voltage
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
FS6S1265R
Maximum Drain Voltage
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
SS
P
D
(Watt H/S)
Derating
T
J
T
A
T
STG
650
650
±30
48
12
8.4
30(950)
35
-0.3 to V
CC
-0.3 to 10
240
1.92
+160
-25 to +85
-55 to +150
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W /
°C
°C
°C
°C
2
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Absolute Maximum Ratings (Continued)
(Ta=25°C,
unless otherwise specified)
Characteristic
Symbol
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
I
AS
(E
AS
)
V
CC,MAX
V
FB
V
SS
P
D
(Watt H/S)
Derating
T
J
T
A
T
STG
Value
650
650
±30
60
15
12.0
37(--)
35
-0.3 to V
CC
-0.3 to 10
280
2.22
+160
-25 to +85
-55 to +150
Unit
V
V
V
ADC
ADC
ADC
A(mJ)
V
V
V
W
W /
°C
°C
°C
°C
FS6S15658R
Maximum Drain Voltage
Drain-Gate Voltage(R
GS
=1MΩ)
Gate-Source(GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C)
Continuous Drain Current (Tc = 100°C)
Single Pulsed Avalanch Current(Energy
(2)
)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Notes
:
1. Repetitive rating : Pulse width limited by maximum junction temperature
2. L = 10mH, V
DD
=50V, R
G
= 27Ω, starting Tj = 25°C
3. L = 13uH, starting Tj = 25°C
3
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Electrical Characteristics (SFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
BV
DSS
I
DSS
R
DS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5BV
DSS
, I
D
=9.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=9.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
V
GS
=0V, V
DS
=25V,
f = 1MHz
Conditions
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating, V
GS
=0V
Zero Gate Voltage Drain Current
Static Drain-Source On Resistance
(1)
Forward transconductance
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=4.5A
V
DS
=50V, I
D
=4.5A
Min.
650
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.1
-
1300
135
25
25
75
130
70
45
8
22
Max.
-
200
300
1.2
-
-
-
-
-
-
-
-
-
-
-
nC
nS
pF
Unit
V
µA
µA
Ω
S
FS6S0965RT/FS6S0965R
Drain-Source Breakdown Voltage
FS6S1265R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source On Resistance
(1)
Forward transconductance
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
BV
DSS
I
DSS
R
DS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5BV
DSS
, I
D
=12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=12.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
V
GS
=0V, V
DS
=25V,
f = 1MHz
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=4.5A
V
DS
=50V, I
D
=4.5A
650
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
-
1820
185
32
38
120
200
100
60
10
30
-
200
300
0.9
-
-
-
-
-
-
-
-
-
-
-
nC
nS
pF
V
µA
µA
Ω
S
4
FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R
Electrical Characteristics (SFET Part; Continued)
(Ta = 25°C unless otherwise specified)
Parameter
Symbol
BV
DSS
I
DSS
R
DS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DD
=0.5BV
DSS
, I
D
=15.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=15.0A,
V
DS
=0.5BV
DSS
(MOSFET
Switching time are
Essentially independent of
Operating temperature)
V
GS
=0V, V
DS
=25V,
f = 1MHz
Conditions
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating, V
GS
=0V
Zero Gate Voltage Drain Current
Static Drain-Source On Resistance
(1)
Forward transconductance
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=4.5A
V
DS
=50V, I
D
=4.5A
Min.
650
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.5
-
2590
270
50
50
155
270
125
90
15
45
Max.
-
200
300
0.65
-
-
-
-
-
-
-
-
-
-
-
nC
nS
pF
Unit
V
µA
µA
Ω
S
FS6S15658R
Drain-Source Breakdown Voltage
Note:
(1) Pulse Test : Pulse width
≤
300uS, Duty Cycle
≤
2 %
1
-
(2) S
= ---
R
5
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