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MB201

Description
Rectifiers
CategoryDiscrete semiconductor    diode   
File Size46KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MB201 Overview

Rectifiers

MB201 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresMETALLURGICALLY BONDED
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-LALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current25 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage65 V
Maximum reverse current0.5 µA
Maximum reverse recovery time0.02 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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MB201 MB207 MB200 MB208 MB206 MB204
Description Rectifiers Rectifiers Rectifiers Rectifiers Rectifiers Rectifiers
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED
application ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V 1 V
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 25 A 25 A 25 A 25 A 25 A 25 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 2 A 2 A 2 A 2 A 2 A 2 A
Package body material GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 2 W 2 W 2 W 2 W 2 W 2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 65 V 40 V 40 V 65 V 185 V 135 V
Maximum reverse current 0.5 µA 1 µA 0.5 µA 1 µA 1.5 µA 0.5 µA
Maximum reverse recovery time 0.02 µs 0.02 µs 0.02 µs 0.02 µs 0.02 µs 0.02 µs
surface mount NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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