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2N5486RLRPG

Description
JFET 25V 10mA
CategoryDiscrete semiconductor    The transistor   
File Size143KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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2N5486RLRPG Overview

JFET 25V 10mA

2N5486RLRPG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCASE 29-11, TO-226AA, 3 PIN
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum drain current (ID)0.03 A
FET technologyJUNCTION
Maximum feedback capacitance (Crss)1 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.31 W
Minimum power gain (Gp)10 dB
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2N5486
JFET VHF/UHF Amplifiers
N−Channel — Depletion
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain −Gate Voltage
Reverse Gate −Source Voltage
Drain Current
Forward Gate Current
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
DG
V
GSR
I
D
I
G(f)
P
D
T
J
, T
stg
Value
25
25
30
10
350
2.8
−65 to +150
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
°C
http://onsemi.com
1 DRAIN
3
GATE
2 SOURCE
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−92 (TO−226AA)
CASE 29−11
STYLE 5
MARKING DIAGRAM
2N
5486
AYWWG
G
2N5486 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
2N5486
2N5486G
Package
TO−92
TO−92
(Pb−Free)
Shipping
1000 Units / Bulk
1000 Units / Bulk
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
October, 2006 − Rev. 2
Publication Order Number:
2N5486/D

2N5486RLRPG Related Products

2N5486RLRPG 2N5486RLRP 2N5486
Description JFET 25V 10mA JFET 25V 10mA JFET VHF/UHF Amplifiers, 1000-BLKBX
Parts packaging code TO-92 TO-92 TO-92
package instruction CASE 29-11, TO-226AA, 3 PIN CASE 29-11, TO-226AA, 3 PIN TO-226AA, 3 PIN
Contacts 3 3 3
Manufacturer packaging code CASE 29-11 29-11 29-11
Reach Compliance Code unknown not_compliant not_compliant
Configuration SINGLE SINGLE SINGLE
Maximum drain current (ID) 0.03 A 0.03 A 0.03 A
FET technology JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 1 pF 1 pF 1 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e1 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 240 235
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.31 W 0.31 W 0.31 W
Minimum power gain (Gp) 10 dB 10 dB 10 dB
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 30 30
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 -
Brand Name - ON Semiconductor onsemi
Is it lead-free? - Contains lead Contains lead
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