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BSP52T1G

Description
Darlington Transistors 1A 80V Bipolar Power NPN
CategoryDiscrete semiconductor    The transistor   
File Size91KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BSP52T1G Overview

Darlington Transistors 1A 80V Bipolar Power NPN

BSP52T1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeTO-261AA
package instructionTO-261, 4 PIN
Contacts4
Manufacturer packaging code0.0318
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time23 weeks
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)2000
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BSP52T1G, BSP52T3G
NPN Small-Signal
Darlington Transistor
This NPN small signal Darlington transistor is designed for use in
switching applications, such as print hammer, relay, solenoid and lamp
drivers. The device is housed in the SOT-223 package, which is
designed for medium power surface mount applications.
Features
http://onsemi.com
The SOT-223 Package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BSP52T1 to Order the 7 Inch/1000 Unit Reel
PNP Complement is BSP62T1
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Total Power Dissipation (Note 2)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage
Temperature Range
Symbol
V
CES
V
CBO
V
EBO
I
C
P
D
Max
80
90
5.0
1.0
0.8
6.4
1.25
10
−65
to 150
Unit
V
V
V
A
W
mW/°C
W
mW/°C
°C
MEDIUM POWER
NPN SILICON
SURFACE MOUNT
DARLINGTON TRANSISTOR
COLLECTOR 2,4
BASE
1
EMITTER 3
4
1
2
MARKING DIAGRAM
3
SOT−223
CASE 318E
STYLE 1
AYW
AS3G
G
P
D
T
J
, T
stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance (Note 1)
Junction-to-Ambient
Thermal Resistance (Note 2)
Junction-to-Ambient
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
Symbol
R
qJA
R
qJA
Value
156
100
Unit
°C/W
°C/W
A
= Assembly Location
Y
= Year
W
= Work Week
AS3
= Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BSP52T1G
BSP52T3G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
1000 / Tape & Reel
4000 / Tape & Reel
T
L
260
10
°C
Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum
recommended footprint.
2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm
2
pad.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
January, 2012
Rev. 8
1
Publication Order Number:
BSP52T1/D

BSP52T1G Related Products

BSP52T1G BSP52T3G
Description Darlington Transistors 1A 80V Bipolar Power NPN Darlington Transistors SS DL XSTR NPN 80V
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
Parts packaging code TO-261AA TO-261AA
package instruction TO-261, 4 PIN TO-261, 4 PIN
Contacts 4 4
Manufacturer packaging code 0.0318 0.0318
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Factory Lead Time 23 weeks 19 weeks
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 2000 2000
JEDEC-95 code TO-261AA TO-261AA
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1.25 W 1.25 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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