BS170G
Small Signal MOSFET
500 mA, 60 Volts
N−Channel TO−92 (TO−226)
Features
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•
This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Drain
−Source
Voltage
Gate−Source Voltage
−
Continuous
−
Non−repetitive (t
p
≤
50
ms)
Drain Current (Note)
Total Device Dissipation @ T
A
= 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
DS
V
GS
V
GSM
I
D
P
D
T
J
, T
stg
Value
60
±
20
±
40
0.5
350
−55
to
+150
Unit
Vdc
Vdc
Vpk
Adc
mW
°C
500 mA, 60 Volts
R
DS(on)
= 5.0
W
N−Channel
D
G
S
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The Power Dissipation of the package may result in a lower continuous
drain current.
12
TO−92 (TO−226)
CASE 29
STYLE 30
3
MARKING DIAGRAM
& PIN ASSIGNMENT
BS170
AYWWG
G
1
Drain
2
Gate
3
Source
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
April, 2011
−
Rev. 6
1
Publication Order Number:
BS170/D
BS170G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate Reverse Current
(V
GS
= 15 Vdc, V
DS
= 0)
Drain−Source Breakdown Voltage
(V
GS
= 0, I
D
= 100
mAdc)
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
Static Drain−Source On Resistance
(V
GS
= 10 Vdc, I
D
= 200 mAdc)
Drain Cutoff Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 250 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(V
DS
= 10 Vdc, V
GS
= 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
(I
D
= 0.2 Adc) See Figure 1
Turn−Off Time
(I
D
= 0.2 Adc) See Figure 1
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
t
on
t
off
−
−
4.0
4.0
10
10
ns
ns
C
iss
−
−
60
pF
V
GS(Th)
r
DS(on)
I
D(off)
g
fs
0.8
−
−
−
2.0
1.8
−
200
3.0
5.0
0.5
−
Vdc
W
mA
mmhos
I
GSS
V
(BR)DSS
−
60
0.01
90
10
−
nAdc
Vdc
Symbol
Min
Typ
Max
Unit
ORDERING INFORMATION
Device
BS170G
BS170RLRAG
Package
TO−92 (TO−226)
(Pb−Free)
TO−92 (TO−226)
(Pb−Free)
Shipping
†
1000 Unit/Tube
2000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
BS170G
RESISTIVE SWITCHING
+25 V
t
on
125
W
40 pF
50
W
1.0 MW
20 dB
50
W
ATTENUATOR
TO SAMPLING SCOPE
50
W
INPUT
V
out
OUTPUT
V
INVERTED
out
10%
INPUT
(V
in
Amplitude 10 Volts)
V
in
PULSE
WIDTH
t
off
V
in
PULSE GENERATOR
50
W
90%
10%
90%
50%
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms
2.0
VGS(th), THRESHOLD VOLTAGE
I D(on) , DRAIN CURRENT (AMPS)
V
DS
= V
GS
I
D
= 1.0 mA
2.0
V
GS
= 10 V
1.6
9.0 V
8.0 V
1.2
7.0 V
6.0 V
5.0 V
0.4
4.0 V
1.6
1.2
0.8
0.8
0.4
0
50
100
0
50
T
J
, JUNCTION TEMPERATURE (°C)
150
0
1.0
2.0
3.0
V
DS
, DRAIN - TO-SOURCE VOLTAGE (VOLTS)
4.0
Figure 3. V
GS(th)
Normalized versus Temperature
Figure 4. On−Region Characteristics
2.0
I D(on) , DRAIN CURRENT (AMPS)
V
GS
= 10 V
9.0 V
8.0 V
C, CAPACITANCE (pF)
100
V
GS
= 0 V
1.6
80
1.2
7.0 V
0.8
6.0 V
0.4
5.0 V
4.0 V
0
20
10
30
V
DS
, DRAIN - TO-SOURCE VOLTAGE (VOLTS)
40
60
40
C
iss
20
C
oss
C
rss
0
10
20
30
40
50
60
V
DS
, DRAIN - TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristics
Figure 6. Capacitance versus
Drain−To−Source Voltage
http://onsemi.com
3
BS170G
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
B
STRAIGHT LEAD
BULK PACK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
---
0.250
---
0.080
0.105
---
0.100
0.115
---
0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
---
6.35
---
2.04
2.66
---
2.54
2.93
---
3.43
---
K
X X
H
V
1
D
G
J
C
N
N
SECTION X−X
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
---
2.04
2.66
1.50
4.00
2.93
---
3.43
---
K
G
X X
V
1
D
J
C
N
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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4
BS170/D
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