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BD539A

Description
Bipolar Transistors - BJT 45W NPN Silicon
CategoryDiscrete semiconductor    The transistor   
File Size57KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
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BD539A Overview

Bipolar Transistors - BJT 45W NPN Silicon

BD539A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerBourns
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)12
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)45 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD540 Series
45 W at 25°C Case Temperature
5 A Continuous Collector Current
Up to 120 V V
CEO
rating
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD539
BD539A
Collector-base voltage
BD539B
BD539C
BD539D
BD539
BD539A
Collector-emitter voltage (see Note 1)
BD539B
BD539C
BD539D
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
40
60
80
100
120
40
60
80
100
120
5
5
45
2
-65 to +150
-65 to +150
-65 to +150
260
V
A
W
W
°C
°C
°C
°C
V
V
UNIT
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

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BD539A BD539 BD539A-S BD539C-S BD539-S
Description Bipolar Transistors - BJT 45W NPN Silicon Bipolar Transistors - BJT 45W NPN Silicon Bipolar Transistors - BJT 60V 5A NPN Bipolar Transistors - BJT 100V 5A NPN Bipolar Transistors - BJT 60V 5A NPN
Is it lead-free? Contains lead Contains lead Lead free Lead free Lead free
Is it Rohs certified? incompatible incompatible conform to conform to conform to
Maker Bourns Bourns Bourns Bourns Bourns
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 PLASTIC, TO-220, FM-3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3
Reach Compliance Code compliant compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 5 A 5 A 5 A 5 A 5 A
Collector-emitter maximum voltage 60 V 40 V 60 V 100 V 40 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 12 12 12 12 12
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 45 W 45 W 45 W 45 W 45 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
JESD-609 code - - e1 e1 e1
Terminal surface - - TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER
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