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KSD1616YTA

Description
Bipolar Transistors - BJT NPN Epitaxial Transistor
Categorysemiconductor    Discrete semiconductor   
File Size320KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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Bipolar Transistors - BJT NPN Epitaxial Transistor

KSD1616YTA Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3 Kinked Lead
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.15 V
Maximum DC Collector Current1 A
Gain Bandwidth Product fT160 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max400
Height4.7 mm
Length4.7 mm
PackagingAmmo Pack
Width3.93 mm
Continuous Collector Current1 A
DC Collector/Base Gain hfe Min135
Pd - Power Dissipation750 mW (3/4 W)
Factory Pack Quantity2000
Unit Weight0.008466 oz
Is Now Part of
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www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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