GS8673ED36BK-675S datasheet, PDF

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GS8673ED36BK-675S: DescriptionSRAM 1.2/1.5V 2M x 36 72M; Categorystorage; File Size179KB，25 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/

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GS8673ED36BK-675S Overview

SRAM 1.2/1.5V 2M x 36 72M

GS8673ED36BK-675S Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	GSI Technology
Product Category	SRAM
Memory Size	72 Mbit
Organization	2 M x 36
Maximum Clock Frequency	675 MHz
Interface Type	Parallel
Supply Voltage - Max	1.4 V
Supply Voltage - Min	1.3 V
Minimum Operating Temperature	0 C
Maximum Operating Temperature	+ 85 C
Mounting Style	SMD/SMT
Package / Case	BGA-260
Packaging	Tray
Memory Type	QDR-III
Type	SigmaQuad-IIIe B4
Moisture Sensitive	Yes
Factory Pack Quantity	8

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GS8673ED18/36BK-725S/625S/550S

260 Pin BGA

Commercial Temp

Industrial Temp

Features

• For use with GSI SRAM Port IP

• 2Mb x 36 and 4Mb x 18 organizations available

• 725 MHz maximum operating frequency

• 725 MT/s peak transaction rate (in millions per second)

• 104 Gb/s peak data bandwidth (in x36 devices)

• Separate I/O DDR Data Buses

• Non-multiplexed SDR Address Bus

• One operation - Read or Write - per clock cycle

• Burst of 4 Read and Write operations

• 3 cycle Read Latency

• On-chip ECC with virtually zero SER

• 1.35V core voltage

• 1.2V or 1.35V or 1.5V I/O interface (HSTL or SSTL)

• Configurable ODT (on-die termination)

• ZQ pin for programmable driver impedance

• ZT pin for programmable ODT impedance

• IEEE 1149.1 JTAG-compliant Boundary Scan

• 260 pin, 14 mm x 22 mm, 1 mm ball pitch BGA package

–K: 5/6 RoHS-compliant package

–GK: 6/6 RoHS-compliant package

72Mb SigmaQuad-IIIe™

Burst of 4 ECCRAM™

Up to 725 MHz

1.35V V

1.2V or 1.35V or 1.5V V

DDQ

Clocking and Addressing Schemes

The GS8673ED18/36BK SigmaQuad-IIIe ECCRAMs are

synchronous devices. They employ three pairs of positive and

negative input clocks; one pair of master clocks, CK and CK,

and two pairs of write data clocks, KD[1:0] and KD[1:0]. All

six input clocks are single-ended; that is, each is received by a

dedicated input buffer.

CK and CK are used to latch address and control inputs, and to

control all output timing. KD[1:0] and KD[1:0] are used solely

to latch data inputs.

Each internal read and write operation in a SigmaQuad-IIIe B4

ECCRAM is four times wider than the device I/O bus. An

input data bus de-multiplexer is used to accumulate incoming

data before it is simultaneously written to the memory array.

An output data multiplexer is used to capture the data produced

from a single memory array read and then route it to the

appropriate output drivers as needed. Therefore, the address

field of a SigmaQuad-IIIe B4 ECCRAM is always two address

pins less than the advertised index depth (e.g. the 4M x 18 has

1M addressable index).

SigmaQuad-IIIe™ Family Overview

SigmaQuad-IIIe ECCRAMs are the Separate I/O half of the

SigmaQuad-IIIe/SigmaDDR-IIIe family of high performance

ECCRAMs. Although very similar to GSI's second generation

of networking SRAMs (the SigmaQuad-II/SigmaDDR-II

family), these third generation devices offer several new

features that help enable significantly higher performance.

On-Chip ECC

GSI's ECCRAMs implement an ECC algorithm that detects

and corrects all single-bit memory errors, including those

induced by SER events such as cosmic rays, alpha particles,

etc. The resulting Soft Error Rate of these devices is

anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude

improvement over comparable SRAMs with no on-chip ECC,

which typically have an SER of 200 FITs/Mb or more.

All quoted SER values are at sea level in New York City.

Parameter Synopsis

Speed Grade

-725S

-625S

-550S

Max Operating Frequency

725 MHz

625 MHz

550 MHz

Read Latency

3 cycles

1.3V to 1.4V

Rev: 1.04 6/2015

1/25

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8673ED36BK-675S Related Products

	GS8673ED36BK-675S	GS8673ED36BGK-675S	GS8673ED36BGK-675IS	GS8673ED18BK-675S	GS8673ED36BK-675IS	GS8673ED18BGK-675IS	GS8673ED18BGK-675S
Description	SRAM 1.2/1.5V 2M x 36 72M	SRAM 1.2/1.5V 2M x 36 72M	SRAM 1.2/1.5V 2M x 36 72M	SRAM 1.2/1.5V 4M x 18 72M	SRAM 1.2/1.5V 2M x 36 72M	SRAM 1.2/1.5V 4M x 18 72M	Static random access memory 1.2/1.5V 4M x 18 72M
Product Category	SRAM	SRAM	SRAM	SRAM	SRAM	SRAM	static random access memory
Interface Type	Parallel	Parallel	Parallel	Parallel	Parallel	Parallel	Parallel
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	-
Manufacturer	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology	-
Memory Size	72 Mbit	72 Mbit	72 Mbit	72 Mbit	72 Mbit	72 Mbit	-
Organization	2 M x 36	2 M x 36	2 M x 36	4 M x 18	2 M x 36	4 M x 18	-
Maximum Clock Frequency	675 MHz	675 MHz	675 MHz	675 MHz	675 MHz	675 MHz	-
Supply Voltage - Max	1.4 V	1.4 V	1.4 V	1.4 V	1.4 V	1.4 V	-
Supply Voltage - Min	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	-
Minimum Operating Temperature	0 C	0 C	- 40 C	0 C	- 40 C	- 40 C	-
Maximum Operating Temperature	+ 85 C	+ 85 C	+ 100 C	+ 85 C	+ 100 C	+ 100 C	-
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	-
Package / Case	BGA-260	BGA-260	BGA-260	BGA-260	BGA-260	BGA-260	-
Packaging	Tray	Tray	Tray	Tray	Tray	Tray	-
Memory Type	QDR-III	QDR-III	QDR-III	QDR-III	QDR-III	QDR-III	-
Type	SigmaQuad-IIIe B4	SigmaQuad-IIIe B4	SigmaQuad-IIIe B4	SigmaQuad-IIIe B4	SigmaQuad-IIIe B4	SigmaQuad-IIIe B4	-
Moisture Sensitive	Yes	Yes	Yes	Yes	Yes	Yes	-
Factory Pack Quantity	8	8	8	8	8	8	-

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