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GS8673ED36BGK-675IS

Description
SRAM 1.2/1.5V 2M x 36 72M
Categorystorage   
File Size179KB,25 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance
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GS8673ED36BGK-675IS Overview

SRAM 1.2/1.5V 2M x 36 72M

GS8673ED36BGK-675IS Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerGSI Technology
Product CategorySRAM
RoHSDetails
Memory Size72 Mbit
Organization2 M x 36
Maximum Clock Frequency675 MHz
Interface TypeParallel
Supply Voltage - Max1.4 V
Supply Voltage - Min1.3 V
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 100 C
Mounting StyleSMD/SMT
Package / CaseBGA-260
PackagingTray
Memory TypeQDR-III
TypeSigmaQuad-IIIe B4
Moisture SensitiveYes
Factory Pack Quantity8
GS8673ED18/36BK-725S/625S/550S
260 Pin BGA
Commercial Temp
Industrial Temp
Features
• For use with GSI SRAM Port IP
• 2Mb x 36 and 4Mb x 18 organizations available
• 725 MHz maximum operating frequency
• 725 MT/s peak transaction rate (in millions per second)
• 104 Gb/s peak data bandwidth (in x36 devices)
• Separate I/O DDR Data Buses
• Non-multiplexed SDR Address Bus
• One operation - Read or Write - per clock cycle
• Burst of 4 Read and Write operations
• 3 cycle Read Latency
• On-chip ECC with virtually zero SER
• 1.35V core voltage
• 1.2V or 1.35V or 1.5V I/O interface (HSTL or SSTL)
• Configurable ODT (on-die termination)
• ZQ pin for programmable driver impedance
• ZT pin for programmable ODT impedance
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 260 pin, 14 mm x 22 mm, 1 mm ball pitch BGA package
–K: 5/6 RoHS-compliant package
–GK: 6/6 RoHS-compliant package
72Mb SigmaQuad-IIIe™
Burst of 4 ECCRAM™
Up to 725 MHz
1.35V V
DD
1.2V or 1.35V or 1.5V V
DDQ
Clocking and Addressing Schemes
The GS8673ED18/36BK SigmaQuad-IIIe ECCRAMs are
synchronous devices. They employ three pairs of positive and
negative input clocks; one pair of master clocks, CK and CK,
and two pairs of write data clocks, KD[1:0] and KD[1:0]. All
six input clocks are single-ended; that is, each is received by a
dedicated input buffer.
CK and CK are used to latch address and control inputs, and to
control all output timing. KD[1:0] and KD[1:0] are used solely
to latch data inputs.
Each internal read and write operation in a SigmaQuad-IIIe B4
ECCRAM is four times wider than the device I/O bus. An
input data bus de-multiplexer is used to accumulate incoming
data before it is simultaneously written to the memory array.
An output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore, the address
field of a SigmaQuad-IIIe B4 ECCRAM is always two address
pins less than the advertised index depth (e.g. the 4M x 18 has
1M addressable index).
SigmaQuad-IIIe™ Family Overview
SigmaQuad-IIIe ECCRAMs are the Separate I/O half of the
SigmaQuad-IIIe/SigmaDDR-IIIe family of high performance
ECCRAMs. Although very similar to GSI's second generation
of networking SRAMs (the SigmaQuad-II/SigmaDDR-II
family), these third generation devices offer several new
features that help enable significantly higher performance.
On-Chip ECC
GSI's ECCRAMs implement an ECC algorithm that detects
and corrects all single-bit memory errors, including those
induced by SER events such as cosmic rays, alpha particles,
etc. The resulting Soft Error Rate of these devices is
anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude
improvement over comparable SRAMs with no on-chip ECC,
which typically have an SER of 200 FITs/Mb or more.
All quoted SER values are at sea level in New York City.
Parameter Synopsis
Speed Grade
-725S
-625S
-550S
Max Operating Frequency
725 MHz
625 MHz
550 MHz
Read Latency
3 cycles
3 cycles
3 cycles
V
DD
1.3V to 1.4V
1.3V to 1.4V
1.3V to 1.4V
Rev: 1.04 6/2015
1/25
© 2012, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8673ED36BGK-675IS Related Products

GS8673ED36BGK-675IS GS8673ED36BK-675S GS8673ED36BGK-675S GS8673ED18BK-675S GS8673ED36BK-675IS GS8673ED18BGK-675IS GS8673ED18BGK-675S
Description SRAM 1.2/1.5V 2M x 36 72M SRAM 1.2/1.5V 2M x 36 72M SRAM 1.2/1.5V 2M x 36 72M SRAM 1.2/1.5V 4M x 18 72M SRAM 1.2/1.5V 2M x 36 72M SRAM 1.2/1.5V 4M x 18 72M Static random access memory 1.2/1.5V 4M x 18 72M
Product Category SRAM SRAM SRAM SRAM SRAM SRAM static random access memory
Interface Type Parallel Parallel Parallel Parallel Parallel Parallel Parallel
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value -
Manufacturer GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology -
Memory Size 72 Mbit 72 Mbit 72 Mbit 72 Mbit 72 Mbit 72 Mbit -
Organization 2 M x 36 2 M x 36 2 M x 36 4 M x 18 2 M x 36 4 M x 18 -
Maximum Clock Frequency 675 MHz 675 MHz 675 MHz 675 MHz 675 MHz 675 MHz -
Supply Voltage - Max 1.4 V 1.4 V 1.4 V 1.4 V 1.4 V 1.4 V -
Supply Voltage - Min 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V -
Minimum Operating Temperature - 40 C 0 C 0 C 0 C - 40 C - 40 C -
Maximum Operating Temperature + 100 C + 85 C + 85 C + 85 C + 100 C + 100 C -
Mounting Style SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT -
Package / Case BGA-260 BGA-260 BGA-260 BGA-260 BGA-260 BGA-260 -
Packaging Tray Tray Tray Tray Tray Tray -
Memory Type QDR-III QDR-III QDR-III QDR-III QDR-III QDR-III -
Type SigmaQuad-IIIe B4 SigmaQuad-IIIe B4 SigmaQuad-IIIe B4 SigmaQuad-IIIe B4 SigmaQuad-IIIe B4 SigmaQuad-IIIe B4 -
Moisture Sensitive Yes Yes Yes Yes Yes Yes -
Factory Pack Quantity 8 8 8 8 8 8 -

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