THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
PCB Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
40
°C/W
0.8
UNIT
SQP100P06-9m3L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
V
GS
= 0 V
On-State Drain Current
a
I
D(on)
V
GS
= -10 V
V
GS
= -10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V
V
GS
= -10 V
V
GS
= -4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= -30 V, R
L
= 0.3
Ω
I
D
≅
-100 A, V
GEN
= -10 V, R
g
= 1
Ω
f = 1 MHz
V
GS
= -10 V
V
DS
= -30 V, I
D
= -100 A
V
GS
= 0 V
V
DS
= -25 V, f = 1 MHz
-
-
-
-
-
-
1
-
-
-
-
9605
1030
750
198
30
54
2.2
18
12
85
36
12 010
1290
940
300
-
-
3.5
30
20
ns
130
55
Ω
nC
pF
g
fs
V
DS
= -60 V
V
DS
= -60 V, T
J
= 125 °C
V
DS
= -60 V, T
J
= 175 °C
V
DS
≤
-5 V
I
D
= -30 A
I
D
= -30 A, T
J
= 125 °C
I
D
= -30 A, T
J
= 175 °C
I
D
= -20 A
-60
-1.5
-
-
-
-
-100
-
-
-
-
-
-
-2.0
-
-
-
-
-
0.0072
-
-
0.0102
82
-
-2.5
± 100
-1
-50
-250
-
0.0093
0.0151
0.0184
0.0133
-
S
Ω
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= -15 V, I
D
= -30 A
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
Forward Voltage
I
SM
V
SD
I
F
= -80 A, V
GS
= 0
-
-
-
-0.95
-300
-1.5
A
V
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-2075-Rev. A, 03-Nov-14
Document Number: 62971
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQP100P06-9m3L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
200
V
GS
= 10 V thru 7 V
V
GS
= 6 V
160
I
D
- Drain Current (A)
Vishay Siliconix
150
120
I
D
- Drain Current (A)
120
90
80
V
GS
= 5 V
40
60
T
C
= 25
°C
30
T
C
= 125
°C
T
C
= - 55
°C
10
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
150
T
C
= 25
°C
T
C
= - 55
°C
0.025
120
g
fs
- Transconductance (S)
0.020
R
DS(on)
- On-Resistance (Ω)
90
T
C
= 125
°C
60
0.015
V
GS
= 4.5 V
0.010
30
0.005
V
GS
= 10 V
0
0
12
24
36
I
D
- Drain Current (A)
48
60
0.000
0
20
40
60
80
100
120
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
15000
10
I
D
= 100 A
V
DS
= 30 V
12000
C - Capacitance (pF)
C
iss
9000
V
GS
-
Gate-to-Source
Voltage (V)
8
6
6000
4
3000
C
oss
0
0
C
rss
10
20
30
40
50
60
2
0
0
40
V
DS
- Drain-to-Source Voltage (V)
80
120
160
Q
g
- Total
Gate
Charge (nC)
200
Capacitance
S14-2075-Rev. A, 03-Nov-14
Gate Charge
Document Number: 62971
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQP100P06-9m3L
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 30 A
1.7
I
S
-
Source
Current (A)
V
GS
= 10 V
10
T
J
= 150
°C
100
Vishay Siliconix
1.4
V
GS
= 4.5 V
1
T
J
= 25
°C
0.1
1.1
0.8
0.01
0.5
- 50 - 25
0.001
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.10
1.2
0.08
R
DS(on)
- On-Resistance (Ω)
V
GS(th)
Variance (V)
0.9
I
D
= 250 μA
0.6
I
D
= 5 mA
0.06
0.3
0.04
0.0
0.02
T
J
= 25
°C
0
2
4
T
J
= 150
°C
- 0.3
0.00
- 0.6
6
8
10
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
V
GS
-
Gate-to-Source
Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
- 60
I
D
= 10 mA
V
DS
- Drain-to-Source Voltage (V)
- 64
- 68
- 72
- 76
- 80
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S14-2075-Rev. A, 03-Nov-14
Document Number: 62971
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Dear seniors, I don't understand how people who sell development boards make money. Just a few boards and then wait for others to buy and collect money?...
In arbitration time slot 3, the arbitrator checks whether there is a synchronization request from other ADC cores. Doesn't this ADC have multiple independent cores? Why does the arbitrator need to che...
[i=s]This post was last edited by dontium on 2015-1-23 11:42[/i] I want to use another amplifier device to replace OPA347NA SOT23-5, and the performance is required to be similar. I would like to ask ...
[i=s] This post was last edited by dontium on 2015-1-23 11:18[/i] uint ADC12_Config(unsigned char temp) { unsigned char i; uint num,tmp=0x000; CS_0; SCLK_1; for(i =0;i<8;i++) { num=temp & 0x80; if(num...
1. DIP dual in-line package DIP (Dual In-line Package) refers to an integrated circuit chip packaged in a dual in-line form. Most small and medium-sized integrated circuits (ICs) use this package form...
Today, with the increasing integration of functions, mobile phones can also be used as portable media players (PMP), digital cameras, handheld computers (PDAs), and even global positioning systems ...[Details]
0. Introduction
In daily life, we often see some special-purpose vehicles. When these vehicles pass through intersections, they often obtain the right of way at intersections by temporarily op...[Details]
Do you often have to add brake fluid to your car's brakes? The fact that you need to pump out the brake fluid to make sure there is no gas in the brake fluid line may not be done by the car owner h...[Details]
introduction
Throughout the history of automotive lighting, power has always played an important role. Initially, cars only needed headlights to see the road in the dark. Later, other light so...[Details]
As cellular phones become more advanced, the power consumption of the system during operation and the power consumption during standby are also increasing. Therefore, the power management design of...[Details]
For a long time, due to the limitation of hardware conditions, the display devices of traditional small handheld devices such as PDA are usually monochrome LCD, and the user interface is very simpl...[Details]
To differentiate their products in a crowded and competitive market, manufacturers of handheld devices often consider battery life and power management as key selling points for cell phones, PDAs, ...[Details]
July 11, 2012, Beijing - Altera Corporation (NASDAQ: ALTR) today announced the launch of 40-Gbps Ethernet (40GbE) and 100-Gbps Ethernet (100GbE) intellectual property (IP) core products. These core...[Details]
1. Principle of displacement angle sensor
The angle sensor is used to detect angles. It has a hole in its body that fits the LEGO axle. When connected to the RCX, the angle sensor counts once ...[Details]
1 Introduction
Building Automation System (BAS) is a distributed monitoring system (DCS) designed according to distributed information and control theory. It is the result of the mutual de...[Details]
1 Introduction
With the development of control, computer, communication, network technology, etc., a new control technology, namely fieldbus, has emerged in the field of industrial control...[Details]
General LED lighting has a current limiting resistor in the driving circuit, and the power consumed by the resistor has nothing to do with the LED light emission. In order to improve efficiency, a...[Details]
I've been studying dot matrix recently. It looks simple, but it takes a while to master it completely! The 8*8 dot matrix hardware circuit I'm making now is like this. The row is driven by 74HC138 + t...[Details]
1 Introduction
There have been many studies on the detection and protection of power grid short circuit and line fault. The short circuit, overload and overvoltage protectors on the market have ...[Details]
In the single-chip microcomputer system, in addition to display devices, sound devices are often used, and the most common sound device is the buzzer. Buzzers are generally used for some low-demand...[Details]
Embedded System
京公网安备 11010802033920号
EEWORLD
