01/99
B-63
P1086, P1087
P-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ Analog Switches
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
30 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Saturation Drain Current (Pulsed)
Drain Cutoff Current
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
I
D(OFF)
I
DGO
V
DS(ON)
r
DS(ON)
P1086
Min
30
2
10
– 10
– 10
– 0.5
2
P1087
Min
30
2
5
– 5.0
– 10
– 0.5
2
0.1
– 0.5
– 0.5
150
Process PJ99
Unit
V
nA
V
mA
nA
µA
nA
µA
V
V
Ω
Max
Max
Test Conditions
I
G
= 1 µA, V
DS
= ØV
V
GS
= 15V, V
DS
= ØV
V
DS
= – 15V, I
D
= – 1 µA
V
DS
= – 20V, V
GS
= ØV
V
DS
= – 15V, V
GS
= 12V (P1086)
V
GS
= 7V (P1087)
V
DG
= – 15V, I
S
= ØA
V
DG
= – 15V, I
S
= ØA
V
GS
= ØV, I
D
= – 6 mA (P1086)
V
GS
= ØV, I
D
= – 3 mA (P1087)
I
D
= – 1 mA, V
GS
= ØV
T
A
= 85°C
T
A
= 85°C
Drain Reverse Current
0.1
– 0.5
Drain Source ON Voltage
Static Drain Source ON Resistance
– 0.5
75
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
r
ds(on)
C
iss
C
rss
75
45
10
10
150
45
10
10
Ω
pF
pF
pF
I
D
= Ø, V
GS
= ØV
V
DS
= – 15V, V
GS
= ØV
V
DS
= ØV, V
GS
= 12V (P1086)
V
DS
= ØV, V
GS
= 7V (P1087)
f = 1 kHz
f = 1 kHz
f = 1 MHz
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
td
(on)
t
r
td
(off)
t
f
15
20
15
50
15
75
25
100
ns
ns
ns
ns
V
DD
= – 6V, V
GS(ON)
= ØV
P1086
V
GS(OFF)
V
D(ON)
R
L
12
–6
910
P1087
7
–3
1.8K
V
MA
Ω
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPP1086, SMPP1087
Pin Configuration
1 Source, 2 Drain, 3 Gate
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
stm32/stm8
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