BYY53 / BYY54
25A Silicon Power Rectifier Diode
Part no.
Description
The BYY53/54 are hermetically sealed 25A-
diodes, which are available in different reverse
voltage classes up to 1500V.
The diodes can be delivered with limited forward
voltage
and reverse current differences for
parallel connecting in rectifier stacks and back-
off-diodes
Features
•
•
•
•
Applications
•
•
•
•
Forward current 25A
Reverse voltage 75V – 1500V
Hermetic press-fit package
Available in different modifications of the
package
Power supplies
Rectifier diode in car generators
Rectifier bridges/stacks
Back-off-diodes
Pinout details
Typical application circuit
Six pulse
bridge
connection
~
~
~
1
3 x BYY53-1200
3 x BYY54-1200
2
BYY53: 1 – cathode; 2 - anode
BYY54: 1 – anode; 2 - cathode
+
-
Ordering information
Device
BYY53-75; …; BYY53-1500
BYY54-75; …; BYY54-1500
Quantity per box
500
500
Options
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BYY53- black, BYY54 – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BYY53………………………………... diode type
400………………………………….. repetitive peak reverse voltage V
RRM
(in V) 400
Issue 2 – November 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
BYY53 / BYY54
Absolute maximum ratings
(at T
amb
= 25°C unless otherwise stated)
Parameter
BYY53-75
BYY53-100
BYY53-150
BYY53-200
BYY53-300
BYY53-400
BYY53-500
Repetitive
peak
reverse
voltage
BYY53-600
BYY53-700
BYY53-800
BYY53-900
BYY53-1000
BYY53-1100
BYY53-1200
BYY53-1300
BYY53-1400
BYY53-1500
BYY54-75
BYY54-100
BYY54-150
BYY54-200
BYY54-300
BYY54-400
BYY54-500
BYY54-600
BYY54-700
BYY54-800
BYY54-900
BYY54-1000
BYY54-1100
BYY54-1200
BYY54-1300
BYY54-1400
BYY54-1500
I
FAV
I
FSM
350
900
Maximum rated value
∫i²dt
780
Repetitive peak forward current
Effective forward current
Junction temperature
Storage temperature range
I
FRM
=π*I
FAV
I
FRMS
T
Jmax
T
stg
79
45
200
- 50 to + 175
A
A
°C
°C
A²s
V
RRM
Symbol
75
100
150
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
25
425
Surge forward current
A
A
half-sine wave,
≤
10 ms
T
J
= 175°C half-sine
wave,
≤
10 ms
half-sine wave,
≤
10 ms
T
J
= 175°C half-sine
wave,
≤
10 ms
f = >15 Hz
V
T
c
= 150°C
Unit
Test condition
Forward current, arithmetic value
Issue 2 – November 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
BYY53 / BYY54
Thermal resistance
Parameter
Junction to case
Symbol
R
θJC
Value
1.2
Unit
°C/W
Thermal characteristics
30
25
20
15
10
5
0
-50
0
50
100
T
C
(°C)
150
168°C
I
F
(A)
200°C
200
250
Forward current derating diagram
Electrical characteristics
(at T
amb
= 25°C unless otherwise stated)
30
25
20
15
10
5
0
0,75
I
F
(A)
0,8
0,85
V
F
(V)
0,9
0,95
1
Forward voltage characteristic
Issue 2 – November 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
BYY53 / BYY54
Electrical characteristics
(at T
amb
= 25°C unless otherwise stated)
Parameter
BYY53-75...1200
Forward
BYY54-75...1200
voltage
BYY53-1300...1500
BYY54-1300...1500
BYY53-75...1200
BYY54-75...1200
BYY53-1300...1500
Forward
BYY54-1300...1500
voltage
(information BYY53-75...1200
BYY54-75...1200
values)
BYY53-1300...1500
BYY54-1300...1500
BYY53-75...150
BYY54-75...150
BYY53-200...1500
Reverse
BYY54-200...1500
current
BYY53-75...400
BYY54-75...400
BYY53-500...1500
BYY54-500...1500
Threshold voltage (information
value)
Slope resistance (information
value)
Symbol
V
F
-
-
V
F
-
-
V
F
-
-
I
RRM
-
-
I
RRM
-
V
(FO)
r
F
-
-
-
0.66
5.75
0.1
-
-
V
mΩ
T
J
= 175°C
T
J
= 175°C
-
-
1.5
0.25
mA
at V
RRM
-
-
1.25
3
mA
T
J
= 150°C, at
V
RRM
0.85
-
-
1.20
V
I
F
= 35 A,
1.1
0.82
1.15
-
V
Min.
-
Typ.
0.95
Max.
1.1
V
Unit
Test contitions
I
F
= 25 A,
measuring time
10ms (half-sine
wave)
I
F
= 20 A,
measuring time
10ms (half-sine
wave),T
J
= 150°C
Options: Electrical characteristics for parallel connecting
(at T
amb
= 25°C unless otherwise stated)
Option
1
Parameter
Forward voltage
difference in one
category of forward
voltage
Reverse current in one
category of forward
voltage (only for
BYY53-300…1500 and
BYY54-300…1500)
Symbol
∆V
F
Min.
-
Typ.
-
Max.
0.05
Unit
V
Test contitions
I
F
= 25 A, measuring
time 10ms (half-sine
wave)
at V
RRM
2
I
R
-
-
0.01
mA
Issue 2 – November 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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