T731N44TOH datasheet, PDF - EEWORLD Datasheet

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T731N44TOH: DescriptionThe T731N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 75mm and a height of 26mm.; CategoryAnalog mixed-signal IC Trigger device; File Size181KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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The T731N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 75mm and a height of 26mm.

T731N44TOH Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	DISK BUTTON, O-CXDB-X4
Reach Compliance Code	compliant
Nominal circuit commutation break time	500 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	2000 V/us
Maximum DC gate trigger current	350 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	350 mA
JESD-30 code	O-CXDB-X4
Maximum leakage current	150 mA
On-state non-repetitive peak current	17000 A
Number of components	1
Number of terminals	4
Maximum on-state current	925000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	2010 A
Off-state repetitive peak voltage	4400 V
Repeated peak reverse voltage	4400 V
surface mount	YES
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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Netz-Thyristor

Phase Control Thyristor

Datenblatt / Data sheet

T 731N

Elektrische Eigenschaften

DRM

RRM

3800

4200

DRM

RRM

3900

4300

TRMSM

= 85 °C

= 60 °C

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 60747-6

f = 50 Hz, i

= 3 A, di

/dt = 6 A/µs

= T

vj max

, v

= 0,67 V

DRM

5.Kennbuc hstabe / 5

letter H

TAVM

TSM

I²t

(di

/dt)

c r

(dv

/dt)

c r

4000 V

4400 V

4100 V

4500 V

2010 A

930 A

1280 A

18000 A

16000 A

1620 10³ A²s

1280 10³ A²s

300 A/µs

Elektrisch e Eig enschaften / Electrical properties

Höchstzul ässige Werte / M aximum rated val ues

Periodische Vorwärts- und Rüc kwärts-Spitzensperrspannung T

= -40°C... T

v j max

Kenndaten

repetiti ve peak forward off-state and revers e voltages

Periodische Vorwärts- und Rüc kwärts-Spitzensperrspannung T

= 0°C... T

v j max

repetiti ve peak forward off-state and revers e voltages

Durchlaßstrom-Grenzeffekti vwert

maxi mum RMS on-state current

Dauergrenzstrom

average on-state c urrent

Stoßstrom-Grenz wert

surge current

Grenzlastintegral

I²t-value

Kritische Str omsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

2000 V/µs

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleus ens pannung

threshold voltage

Ersatzwi derstand

slope resistanc e

Durchlaßkennlinie

on-state c haracteristic

= T

vj max

, i

= 1200A

= T

vj max

= T

vj max

= T

vj max

(TO)

typ.

max.

typ.

max.

typ.

max.

1,6 V

1,75 V

1 V

1,1 V

0,5 mΩ

0,542 mΩ

⋅

Ln ( i

⋅

max.

Zündstr om

gate trigger current

Zünds pannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rüc kwärts-Sperrstrom

forward off-state and reverse c urrent

Zündverzug

gate controlled delay ti me

prepar ed by: C. Schneider

approved by: J. Przybilla

= 25°C, v

= 12 V

= 25°C, v

= 12 V

= T

vj max

, v

= 12 V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 12 V

= 25°C, v

= 12 V, R

≥

Ω

= 3 A, di

/dt = 6 A/µs, t

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 60747-6

= 25 °C,i

= 3 A, di

/dt = 6 A/µs

, i

-0,0955

0,00035

0,1592

0,004219

-0,0926

0,000391

0,1754

0,003759

max.

350 mA

max.

2,5 V

20 mA

10 mA

0,4 V

350 mA

3 A

200 mA

2 µs

date of publication: 2005-04-15

revision:

BIP AM / SM PB, 2001-12-14, Przybilla J. /

Keller

Seite/page

1/9

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Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	conform to	-	-	-
Reach Compliance Code	compliant	-	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Nominal circuit commutation break time	500 µs	-	-	500 µs	500 µs	500 µs	500 µs	500 µs	500 µs	500 µs
Critical rise rate of minimum off-state voltage	2000 V/us	-	-	2000 V/us	2000 V/us	2000 V/us	2000 V/us	2000 V/us	2000 V/us	2000 V/us
Maximum DC gate trigger current	350 mA	-	350 mA	350 mA	350 mA	350 mA	350 mA	350 mA	350 mA	350 mA
Maximum DC gate trigger voltage	2.5 V	-	-	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Maximum holding current	350 mA	-	-	350 mA	350 mA	350 mA	350 mA	350 mA	350 mA	350 mA
Maximum leakage current	150 mA	-	-	200 mA	200 mA	200 mA	200 mA	150 mA	150 mA	150 mA
On-state non-repetitive peak current	17000 A	-	-	18000 A	18000 A	18000 A	18000 A	17000 A	17000 A	17000 A
Maximum on-state current	925000 A	-	-	1280000 A	1280000 A	1280000 A	1280000 A	925000 A	925000 A	925000 A
Maximum operating temperature	125 °C	-	-	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	225	225	225	225	-	-	-
Off-state repetitive peak voltage	4400 V	-	4400 V	4300 V	4500 V	3900 V	4100 V	3800 V	4200 V	4000 V
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-
Trigger device type	SCR	-	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Base Number Matches	1	-	1	1	1	1	1	1	1	1
JESD-609 code	-	-	-	e3	e3	e3	e3	e3	e3	e3
Terminal surface	-	-	-	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN

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