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T731N41TOH

Description
Silicon Controlled Rectifier, 1280000mA I(T), 4100V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size181KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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T731N41TOH Overview

Silicon Controlled Rectifier, 1280000mA I(T), 4100V V(DRM)

T731N41TOH Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Nominal circuit commutation break time500 µs
Critical rise rate of minimum off-state voltage2000 V/us
Maximum DC gate trigger current350 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current350 mA
JESD-609 codee3
Maximum leakage current200 mA
Humidity sensitivity level1
On-state non-repetitive peak current18000 A
Maximum on-state current1280000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Peak Reflow Temperature (Celsius)225
Off-state repetitive peak voltage4100 V
Terminal surfaceMATTE TIN
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T 731N
Elektrische Eigenschaften
V
DRM
,V
RRM
3800
4200
V
DRM
,V
RRM
3900
4300
I
TRMSM
T
C
= 85 °C
T
C
= 60 °C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 60747-6
f = 50 Hz, i
GM
= 3 A, di
G
/dt = 6 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
5.Kennbuc hstabe / 5
th
letter H
I
TAVM
I
TSM
I²t
(di
T
/dt)
c r
(dv
D
/dt)
c r
4000 V
4400 V
V
4100 V
4500 V
V
2010 A
930 A
1280 A
18000 A
16000 A
1620 10³ A²s
1280 10³ A²s
300 A/µs
Elektrisch e Eig enschaften / Electrical properties
Höchstzul ässige Werte / M aximum rated val ues
Periodische Vorwärts- und Rüc kwärts-Spitzensperrspannung T
vj
= -40°C... T
v j max
Kenndaten
repetiti ve peak forward off-state and revers e voltages
Periodische Vorwärts- und Rüc kwärts-Spitzensperrspannung T
vj
= 0°C... T
v j max
repetiti ve peak forward off-state and revers e voltages
Durchlaßstrom-Grenzeffekti vwert
maxi mum RMS on-state current
Dauergrenzstrom
average on-state c urrent
Stoßstrom-Grenz wert
surge current
Grenzlastintegral
I²t-value
Kritische Str omsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
2000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleus ens pannung
threshold voltage
Ersatzwi derstand
slope resistanc e
Durchlaßkennlinie
on-state c haracteristic
v
T
T
vj
= T
vj max
, i
T
= 1200A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
T
V
(TO)
r
T
typ.
A
B
C
D
A
B
C
D
typ.
max.
typ.
max.
typ.
max.
1,6 V
1,75 V
1 V
1,1 V
0,5 mΩ
0,542 mΩ
=
A
+
B
i
T
+
C
Ln ( i
T
+
1)
+
D
i
T
max.
Zündstr om
gate trigger current
Zünds pannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rüc kwärts-Sperrstrom
forward off-state and reverse c urrent
Zündverzug
gate controlled delay ti me
prepar ed by: C. Schneider
approved by: J. Przybilla
T
vj
= 25°C, v
D
= 12 V
T
vj
= 25°C, v
D
= 12 V
T
vj
= T
vj max
, v
D
= 12 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 12 V
T
vj
= 25°C, v
D
= 12 V, R
GK
10
i
GM
= 3 A, di
G
/dt = 6 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 60747-6
T
vj
= 25 °C,i
GM
= 3 A, di
G
/dt = 6 A/µs
I
GT
V
GT
I
GD
V
GD
I
H
I
L
i
D
, i
R
t
gd
-0,0955
0,00035
0,1592
0,004219
-0,0926
0,000391
0,1754
0,003759
max.
350 mA
max.
max.
max.
max.
max.
max.
max.
max.
2,5 V
20 mA
10 mA
0,4 V
350 mA
3 A
200 mA
2 µs
date of publication: 2005-04-15
revision:
5
BIP AM / SM PB, 2001-12-14, Przybilla J. /
Keller
Seite/page
1/9

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Is it Rohs certified? conform to - conform to conform to conform to conform to conform to - - -
Reach Compliance Code compliant - compliant compliant compliant compliant compliant compliant compliant compliant
Nominal circuit commutation break time 500 µs - 500 µs - 500 µs 500 µs 500 µs 500 µs 500 µs 500 µs
Critical rise rate of minimum off-state voltage 2000 V/us - 2000 V/us - 2000 V/us 2000 V/us 2000 V/us 2000 V/us 2000 V/us 2000 V/us
Maximum DC gate trigger current 350 mA - 350 mA 350 mA 350 mA 350 mA 350 mA 350 mA 350 mA 350 mA
Maximum DC gate trigger voltage 2.5 V - 2.5 V - 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
Maximum holding current 350 mA - 350 mA - 350 mA 350 mA 350 mA 350 mA 350 mA 350 mA
JESD-609 code e3 - - - e3 e3 e3 e3 e3 e3
Maximum leakage current 200 mA - 150 mA - 200 mA 200 mA 200 mA 150 mA 150 mA 150 mA
On-state non-repetitive peak current 18000 A - 17000 A - 18000 A 18000 A 18000 A 17000 A 17000 A 17000 A
Maximum on-state current 1280000 A - 925000 A - 1280000 A 1280000 A 1280000 A 925000 A 925000 A 925000 A
Maximum operating temperature 125 °C - 125 °C - 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C - -40 °C - -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Peak Reflow Temperature (Celsius) 225 - NOT SPECIFIED NOT SPECIFIED 225 225 225 - - -
Off-state repetitive peak voltage 4100 V - 4400 V 4400 V 4300 V 4500 V 3900 V 3800 V 4200 V 4000 V
Terminal surface MATTE TIN - - - MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - -
Trigger device type SCR - SCR SCR SCR SCR SCR SCR SCR SCR
Base Number Matches 1 - 1 1 1 1 1 1 1 1
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