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T731N40TOH

Description
Silicon Controlled Rectifier, 2010A I(T)RMS, 925000mA I(T), 4000V V(DRM), 4000V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size181KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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T731N40TOH Overview

Silicon Controlled Rectifier, 2010A I(T)RMS, 925000mA I(T), 4000V V(DRM), 4000V V(RRM), 1 Element

T731N40TOH Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-CXDB-X4
Reach Compliance Codecompliant
Nominal circuit commutation break time500 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage2000 V/us
Maximum DC gate trigger current350 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current350 mA
JESD-30 codeO-CXDB-X4
JESD-609 codee3
Maximum leakage current150 mA
On-state non-repetitive peak current17000 A
Number of components1
Number of terminals4
Maximum on-state current925000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current2010 A
Off-state repetitive peak voltage4000 V
Repeated peak reverse voltage4000 V
surface mountYES
Terminal surfaceMATTE TIN
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeSCR
Base Number Matches1
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T 731N
Elektrische Eigenschaften
V
DRM
,V
RRM
3800
4200
V
DRM
,V
RRM
3900
4300
I
TRMSM
T
C
= 85 °C
T
C
= 60 °C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 60747-6
f = 50 Hz, i
GM
= 3 A, di
G
/dt = 6 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
5.Kennbuc hstabe / 5
th
letter H
I
TAVM
I
TSM
I²t
(di
T
/dt)
c r
(dv
D
/dt)
c r
4000 V
4400 V
V
4100 V
4500 V
V
2010 A
930 A
1280 A
18000 A
16000 A
1620 10³ A²s
1280 10³ A²s
300 A/µs
Elektrisch e Eig enschaften / Electrical properties
Höchstzul ässige Werte / M aximum rated val ues
Periodische Vorwärts- und Rüc kwärts-Spitzensperrspannung T
vj
= -40°C... T
v j max
Kenndaten
repetiti ve peak forward off-state and revers e voltages
Periodische Vorwärts- und Rüc kwärts-Spitzensperrspannung T
vj
= 0°C... T
v j max
repetiti ve peak forward off-state and revers e voltages
Durchlaßstrom-Grenzeffekti vwert
maxi mum RMS on-state current
Dauergrenzstrom
average on-state c urrent
Stoßstrom-Grenz wert
surge current
Grenzlastintegral
I²t-value
Kritische Str omsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
2000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleus ens pannung
threshold voltage
Ersatzwi derstand
slope resistanc e
Durchlaßkennlinie
on-state c haracteristic
v
T
T
vj
= T
vj max
, i
T
= 1200A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
T
V
(TO)
r
T
typ.
A
B
C
D
A
B
C
D
typ.
max.
typ.
max.
typ.
max.
1,6 V
1,75 V
1 V
1,1 V
0,5 mΩ
0,542 mΩ
=
A
+
B
i
T
+
C
Ln ( i
T
+
1)
+
D
i
T
max.
Zündstr om
gate trigger current
Zünds pannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rüc kwärts-Sperrstrom
forward off-state and reverse c urrent
Zündverzug
gate controlled delay ti me
prepar ed by: C. Schneider
approved by: J. Przybilla
T
vj
= 25°C, v
D
= 12 V
T
vj
= 25°C, v
D
= 12 V
T
vj
= T
vj max
, v
D
= 12 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 12 V
T
vj
= 25°C, v
D
= 12 V, R
GK
10
i
GM
= 3 A, di
G
/dt = 6 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 60747-6
T
vj
= 25 °C,i
GM
= 3 A, di
G
/dt = 6 A/µs
I
GT
V
GT
I
GD
V
GD
I
H
I
L
i
D
, i
R
t
gd
-0,0955
0,00035
0,1592
0,004219
-0,0926
0,000391
0,1754
0,003759
max.
350 mA
max.
max.
max.
max.
max.
max.
max.
max.
2,5 V
20 mA
10 mA
0,4 V
350 mA
3 A
200 mA
2 µs
date of publication: 2005-04-15
revision:
5
BIP AM / SM PB, 2001-12-14, Przybilla J. /
Keller
Seite/page
1/9

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Description Silicon Controlled Rectifier, 2010A I(T)RMS, 925000mA I(T), 4000V V(DRM), 4000V V(RRM), 1 Element The T731N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 75mm and a height of 26mm. SCR MODULE 4400V 2010A DO200AC Silicon Controlled Rectifier, 1280000mA I(T), 4300V V(DRM) Silicon Controlled Rectifier, 1280000mA I(T), 4500V V(DRM) Silicon Controlled Rectifier, 1280000mA I(T), 3900V V(DRM) Silicon Controlled Rectifier, 1280000mA I(T), 4100V V(DRM) Silicon Controlled Rectifier, 2010A I(T)RMS, 925000mA I(T), 3800V V(DRM), 3800V V(RRM), 1 Element Silicon Controlled Rectifier, 2010A I(T)RMS, 925000mA I(T), 4200V V(DRM), 4200V V(RRM), 1 Element
Reach Compliance Code compliant - compliant compliant compliant compliant compliant compliant compliant compliant
Nominal circuit commutation break time 500 µs - 500 µs - 500 µs 500 µs 500 µs 500 µs 500 µs 500 µs
Critical rise rate of minimum off-state voltage 2000 V/us - 2000 V/us - 2000 V/us 2000 V/us 2000 V/us 2000 V/us 2000 V/us 2000 V/us
Maximum DC gate trigger current 350 mA - 350 mA 350 mA 350 mA 350 mA 350 mA 350 mA 350 mA 350 mA
Maximum DC gate trigger voltage 2.5 V - 2.5 V - 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
Maximum holding current 350 mA - 350 mA - 350 mA 350 mA 350 mA 350 mA 350 mA 350 mA
JESD-609 code e3 - - - e3 e3 e3 e3 e3 e3
Maximum leakage current 150 mA - 150 mA - 200 mA 200 mA 200 mA 200 mA 150 mA 150 mA
On-state non-repetitive peak current 17000 A - 17000 A - 18000 A 18000 A 18000 A 18000 A 17000 A 17000 A
Maximum on-state current 925000 A - 925000 A - 1280000 A 1280000 A 1280000 A 1280000 A 925000 A 925000 A
Maximum operating temperature 125 °C - 125 °C - 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C - -40 °C - -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Off-state repetitive peak voltage 4000 V - 4400 V 4400 V 4300 V 4500 V 3900 V 4100 V 3800 V 4200 V
Terminal surface MATTE TIN - - - MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Trigger device type SCR - SCR SCR SCR SCR SCR SCR SCR SCR
Base Number Matches 1 - 1 1 1 1 1 1 1 1
Is it Rohs certified? - - conform to conform to conform to conform to conform to conform to - -
Peak Reflow Temperature (Celsius) - - NOT SPECIFIED NOT SPECIFIED 225 225 225 225 - -
Maximum time at peak reflow temperature - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - -
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