T2480N28TOFVTXPSA1 datasheet, PDF

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T2480N28TOFVTXPSA1: DescriptionSCR MODULE 2800V 5100A DO200AE; CategoryAnalog mixed-signal IC Trigger device; File Size265KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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T2480N28TOFVTXPSA1 Overview

SCR MODULE 2800V 5100A DO200AE

T2480N28TOFVTXPSA1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	DISK BUTTON, O-XXDB-X4
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	12 weeks
Configuration	SINGLE
Maximum DC gate trigger current	250 mA
JESD-30 code	O-XXDB-X4
Number of components	1
Number of terminals	4
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum rms on-state current	5610 A
Guideline	IEC-60747-6
Off-state repetitive peak voltage	2800 V
Repeated peak reverse voltage	2800 V
surface mount	YES
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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Netz-Thyristor

Phase Control Thyristor

Datenblatt / Data sheet

T2480N

Elektrische

Eigenschaften

= -40 °C... T

vj max

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

enndaten

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T

= -40 °C... T

vj max

repetitive peak forward off-state and reverse voltages

DRM

RRM

2200

2400

DSM

RSM

TRMSM

2200

2400

2300

2500

2600 V

2800 V

2600 V

2800 V

2700 V

2900 V

5100 A

2490 A

3570 A

5610 A

47500 A

43500 A

11045 10³ A²s

9460 10³ A²s

200 A/µs

1000 V/µs

Vorwärts-Stossspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stossspitzensperrspannung

non-repetitive peak reverse voltage

Durchlassstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Dauergrenzstrom

average on-state current

Durchlaßstrom-Effektivwert

RMS on-state current

Stossstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

= +25 °C... T

vj max

= 85 °C

= 55 °C,

= 180°sin, t

= 10 ms

TAVM

TRMS

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 60747-6

f = 50 Hz, i

= 1 A, di

/dt = 1 A/µs

= T

vj max

, v

= 0,67 V

DRM

5.Kennbuchstabe / 5 letter F

TSM

I²t

(di

/dt)

(dv

/dt)

Charakteristische Werte / Characteristic values

Durchlassspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Durchlasskennlinie

600 A

≤

12500 A

on-state characteristic

= T

vj max

, i

= 6,5 kA

= T

vj max

, i

= 3 kA

= T

vj max

= T

vj max

= T

vj max

(TO)

max.

2 V

1,43 V

0,95 V

0,154 mΩ

8,249E-01

1,398E-04

8,036E-03

2,454E-03

max.

250 mA

2,5 V

10 mA

5 mA

0,25 V

300 mA

1500 mA

250 mA

4 µs

⋅

ln ( i

⋅

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

= 25 °C, v

= 12V

= 25 °C, v

= 12V

= T

vj max

, v

= 12V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25 °C, v

= 12V

= 25 °C, v

= 12V, R

≥

Ω

= 1 A, di

/dt = 1 A/µs, t

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

, i

DIN IEC 60747-6

= 25 °C, i

= 1 A, di

/dt = 1 A/µs

prepared by: H.Sandmann

approved by: M.Leifeld

date of publication:

revision:

2010-07-19

3.1

IFBIP D AEC / 2010-07-19, H.Sandmann

A 23/10

Seite/page

1/10

T2480N28TOFVTXPSA1 Related Products

	T2480N28TOFVTXPSA1	T2480N24TOF VT	T2480N26TOF VT	T2480N22TOF VT	T2480N22TOFVTXPSA1	T2480N24TOFVTXPSA1	T2480N26TOFVTXPSA1	T2480N26TOFVT	T2480N28TOFVTHOSA1
Description	SCR MODULE 2800V 5100A DO200AE	The T2480N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 111mm and a height of 26mm.	The T2480N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 111mm and a height of 26mm.	The T2480N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 111mm and a height of 26mm.	SCR MODULE 2800V 5100A DO200AE	SCR MODULE 2800V 5100A DO200AE	SCR MODULE 2800V 5100A DO200AE	Silicon Controlled Rectifier,	Silicon Controlled Rectifier
Maker	Infineon	-	-	-	Infineon	Infineon	Infineon	Infineon	Infineon
Reach Compliance Code	compliant	-	-	-	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	-	-	-	EAR99	EAR99	EAR99	-	EAR99
Trigger device type	SCR	-	-	-	SCR	SCR	SCR	SCR	SCR

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