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BSC016N03MS G

Description
With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.
Categorysemiconductor    Discrete semiconductor   
File Size193KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSC016N03MS G Overview

With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.

BSC016N03MS G
OptiMOS™3
M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Excellent gate charge x
R
DS(on)
product (FOM)
• Qualified according to JEDEC
1)
for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant;
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
30
1.6
2
100
PG-TDSON-8
A
V
mΩ
Type
BSC016N03MS G
Package
PG-TDSON-8
Marking
016N03MS
Maximum ratings,
at
T
j
=25 ° unless otherwise specified
C,
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °
C
V
GS
=10 V,
T
C
=100 °
C
V
GS
=4.5 V,
T
C
=25 °
C
V
GS
=4.5 V,
T
C
=100 °
C
V
GS
=4.5 V,
T
A
=25 °
C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
100
100
100
100
Unit
A
28
400
50
340
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °
C
T
C
=25 °
C
I
D
=50 A,
R
GS
=25
J-STD20 and JESD22
Rev. 1.17
page 1
2009-10-22

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