APM4463K
P-Channel Enhancement Mode MOSFET
Features
•
-20V/-10A ,
R
DS(ON)
=12mΩ(typ.) @ V
GS
=-4.5V
R
DS(ON)
=18mΩ(typ.) @ V
GS
=-2.5V
Pin Description
D
D
D
D
•
•
•
•
S
S
S
G
Super High Dense Cell Design
Reliable and Rugged
SOP-8 Package
Lead Free Available (RoHS Compliant)
Top View of SOP
−
8
(1, 2, 3)
S S S
Applications
(4) G
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
DD DD
(5, 6, 7, 8)
P-Channel MOSFET
Ordering and Marking Information
APM 4463
Lead Free Code
Handling Code
Tem p. Range
Package Code
Package Code
K : SO P-8
Operating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : O riginal Device
XXXXX - Date Code
APM 4463 K :
APM 4463
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
www.anpec.com.tw
APM4463K
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
(T
A
= 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
V
GS
=-4.5V
Rating
-20
±16
-10
-40
-2.3
150
-55 to 150
2
0.8
62.5
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
Test Condition
APM4463K
Min.
-20
-1
-30
-0.7
-0.9
12
18
-0.7
5
4540
1100
810
40
40
170
90
60
60
270
150
-1.5
±100
17
25
-1.3
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
a
a
V
GS
=0V, I
DS
=-250µA
V
DS
=-16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±16V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-10A
V
GS
=-2.5V, I
DS
=-8A
I
SD
=-2.3A, V
GS
=0V
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-15V,
Frequency=1.0MHz
V
DD
=-10V, R
L
=10Ω,
I
DS
=-1A,V
GEN
=-4.5V,
R
G
=6Ω
V
µA
V
nA
mΩ
V
Ω
pF
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
b
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
ns
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw
APM4463K
Electrical Characteristics (Cont.)
Symbol
Parameter
b
(T
A
= 25°C unless otherwise noted)
APM4463K
Min.
Typ.
37
Max.
45
nC
Test Condition
Unit
Gate Charge Characteristics
Q
g
Total Gate Charge
Q
gs
Q
gd
Notes:
Gate-Source Charge
Gate-Drain Charge
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-10A
6.5
2.5
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
3
www.anpec.com.tw
APM4463K
Typical Characteristics
Power Dissipation
2.5
12
Drain Current
2.0
10
-I
D
- Drain Current (A)
P
tot
- Power (W)
8
1.5
6
1.0
4
0.5
2
T
A
=25 C
0
20
40
60
80 100 120 140 160
o
0.0
0
T
A
=25 C,V
G
=-4.5V
0
20
40
60
80
100 120 140 160
o
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
100
it
Thermal Transient Impedance
2
1
Duty = 0.5
-I
D
- Drain Current (A)
R
10
ds
(o
n)
L
im
0.2
10ms
0.1
0.1
0.05
0.02
1
100ms
1s
0.01
0.01
0.1
DC
0.01
0.01
T
A
=25 C
0.1
1
10
100
o
Single Pulse
1E-3
1E-4
Mounted on 1in pad
o
R
θ
JA
: 62.5 C/W
2
1E-3
0.01
0.1
1
10 30
-V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
4
www.anpec.com.tw
APM4463K
Typical Characteristics (Cont.)
Output Characteristics
40
36
32
V
GS
= -3, -4, -5, -6, -7, -8, -9, -10V
Drain-Source On Resistance
30
27
R
DS(ON)
- On - Resistance (mΩ)
24
21
18
15
12
9
6
3
V
GS
= -4.5V
V
GS
= -2.5V
-I
D
- Drain Current (A)
28
24
20
16
12
8
4
0
0
1
2
3
4
5
-2V
0
0
5
10
15
20
25
30
35
40
-V
DS
- Drain - Source Voltage (V)
-I
D
- Drain Current (A)
Transfer Characteristics
40
35
30
1.75
1.50
Gate Threshold Voltage
I
DS
= -250
µΑ
Normalized Threshold Voltage
-I
D
- Drain Current (A)
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25
25
20
15
10
T
j
=25 C
5
0
0.0
o
T
j
=125 C
o
T
j
=-55 C
o
0.5 1.0
1.5
2.0 2.5
3.0
3.5
4.0
0
25
50
75
100 125 150
-V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
5
www.anpec.com.tw
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