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APTGF90X60E3G

Description
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-33
CategoryThe transistor   
File Size211KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
Download Datasheet Parametric Compare View All

APTGF90X60E3G Overview

Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-33

APTGF90X60E3G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X33
Contacts33
Reach Compliance Codecompliant
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)130 A
Collector-emitter maximum voltage600 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X33
JESD-609 codee1
Humidity sensitivity level1
Number of components6
Number of terminals33
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)180 ns
Nominal on time (ton)36 ns
Base Number Matches1
APTGF90X60E3
3 Phase bridge
NPT IGBT Power Module
Application
AC Motor control
V
CES
= 600V
I
C
= 90A @ Tc = 80°C
Features
Non Punch Through (NPT) Fast IGBT
®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
19
17
15
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
20
14
21
13
1 2
3 4
5 6
7 8
9 10
11 12
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
200A@520V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGF90X60E3 – Rev 0
July, 2003
Max ratings
600
130
90
230
±20
430
Unit
V
A
V
W

APTGF90X60E3G Related Products

APTGF90X60E3G APTGF90X60E3
Description Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-33 Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-33
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Maker Microsemi Microsemi
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X33 MODULE-33
Contacts 33 33
Reach Compliance Code compliant unknown
Is Samacsys N N
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 130 A 130 A
Collector-emitter maximum voltage 600 V 600 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code R-XUFM-X33 R-XUFM-X33
JESD-609 code e1 e0
Number of components 6 6
Number of terminals 33 33
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN SILVER COPPER TIN LEAD
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 180 ns 180 ns
Nominal on time (ton) 36 ns 36 ns
Base Number Matches 1 1

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