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GPAS1001 MNG

Description
DIODE GEN PURP 50V 10A TO263AB
Categorysemiconductor    Discrete semiconductor   
File Size187KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

GPAS1001 MNG Overview

DIODE GEN PURP 50V 10A TO263AB

GPAS1001 MNG Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)50V
Current - average rectification (Io)10A
Voltage at different If - Forward (Vf1.1V @ 10A
speedStandard recovery >500ns, >200mA (Io)
Current at different Vr - Reverse leakage current5µA @ 50V
Capacitance at different Vr, F50pF @ 4V,1MHz
Installation typesurface mount
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
Supplier device packagingTO-263AB(D²PAK)
Operating Temperature - Junction-55°C ~ 150°C
GPAS1001 - GPAS1007
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 1000V Glass Passivated Rectifiers
FEATURES
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TO-263AB (D PAK)
MECHANICAL DATA
Case:
TO-263AB (D
2
PAK)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Weight:
1.7 g (approximately)
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 10 A
Maximum reverse current @ rated V
R
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
θJC
T
J
T
STG
GPAS GPAS GPAS GPAS GPAS GPAS GPAS
1001
50
35
50
1002
100
70
100
1003
200
140
200
1004
400
280
400
10
150
1.1
5
100
50
4
- 55 to +150
- 55 to +150
1005
600
420
600
1006
800
560
800
1007
1000
700
1000
UNIT
V
V
V
A
A
V
μA
pF
°C/W
°C
°C
Document Number: DS_D0000118
Version: B15

GPAS1001 MNG Related Products

GPAS1001 MNG GPAS1002 MNG GPAS1003 MNG GPAS1004 MNG GPAS1005 MNG GPAS1006 MNG GPAS1007 MNG GPAS1005RNG GPAS1005MNG
Description DIODE GEN PURP 50V 10A TO263AB DIODE GEN PURP 100V 10A TO263AB DIODE GEN PURP 200V 10A TO263AB DIODE GEN PURP 400V 10A TO263AB DIODE GEN PURP 600V 10A TO263AB DIODE GEN PURP 800V 10A TO263AB DIODE GEN PURP 10A TO263AB Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2
Diode type standard standard standard standard standard standard standard RECTIFIER DIODE RECTIFIER DIODE
Voltage - DC Reverse (Vr) (Maximum) 50V 100V 200V 400V 600V 800V - - -
Current - average rectification (Io) 10A 10A 10A 10A 10A 10A 10A - -
Voltage at different If - Forward (Vf 1.1V @ 10A 1.1V @ 10A 1.1V @ 10A 1.1V @ 10A 1.1V @ 10A 1.1V @ 10A 1.1V @ 10A - -
speed Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io) - -
Current at different Vr - Reverse leakage current 5µA @ 50V 5µA @ 100V 5µA @ 200V 5µA @ 400V 5µA @ 600V 5µA @ 800V 5µA @ 1000V - -
Capacitance at different Vr, F 50pF @ 4V,1MHz 50pF @ 4V,1MHz 50pF @ 4V,1MHz 50pF @ 4V,1MHz 50pF @ 4V,1MHz 50pF @ 4V,1MHz 50pF @ 4V,1MHz - -
Installation type surface mount surface mount surface mount surface mount surface mount surface mount surface mount - -
Package/casing TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-263-3, D²Pak (2-lead + tab), TO-263AB - -
Supplier device packaging TO-263AB(D²PAK) TO-263AB(D²PAK) TO-263AB(D²PAK) TO-263AB(D²PAK) TO-263AB(D²PAK) TO-263AB(D²PAK) TO-263AB(D²PAK) - -
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C - -

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