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TSSA5U60 E3G

Description
DIODE SCHOTTKY 60V 5A DO214AC
Categorysemiconductor    Discrete semiconductor   
File Size194KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSSA5U60 E3G Overview

DIODE SCHOTTKY 60V 5A DO214AC

TSSA5U60 E3G Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)60V
Current - average rectification (Io)5A
Voltage at different If - Forward (Vf560mV @ 5A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current300µA @ 60V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingDO-214AC,SMA
Supplier device packagingDO-214AC(SMA)
Operating Temperature - Junction-55°C ~ 150°C
TSSA5U50 - TSSA5U60
Taiwan Semiconductor
5A, 50V - 60V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Low power loss/ high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-214AC (SMA)
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier is designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compund (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Instantaneous forward voltage
(Note 1)
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
RRM
I
F(AV)
I
FSM
TYP.
I
F
= 5A
V
F
I
R
R
θJL
R
θJA
T
J
T
STG
25
70
- 55 to +150
- 55 to +150
0.44
0.39
MAX.
0.54
0.49
300
50
28
SYMBOL
TSSA5U50
5U50
50
5
75
TYP.
0.48
0.44
MAX.
0.56
0.52
V
μA
mA
°C/W
°C
°C
TSSA5U60
5U60
60
V
A
A
UNIT
Maximum instantaneous reverse current at rated
reverse voltage
Typical thermal resistance
Operating temperature range
Storage temperature range
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
Version: D1512

TSSA5U60 E3G Related Products

TSSA5U60 E3G TSSA5U50 E3G TSSA5U50 M2G TSSA5U60 M2G
Description DIODE SCHOTTKY 60V 5A DO214AC DIODE SCHOTTKY 50V 5A DO214AC DIODE SCHOTTKY 50V 5A DO214AC DIODE SCHOTTKY 60V 5A DO214AC
Diode type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Maximum) 60V 50V 50V 60V
Current - average rectification (Io) 5A 5A 5A 5A
Voltage at different If - Forward (Vf 560mV @ 5A 540mV @ 5A 540mV @ 5A 560mV @ 5A
speed Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current 300µA @ 60V 300µA @ 50V 300µA @ 50V 300µA @ 60V
Installation type surface mount surface mount surface mount surface mount
Package/casing DO-214AC,SMA DO-214AC,SMA DO-214AC,SMA DO-214AC,SMA
Supplier device packaging DO-214AC(SMA) DO-214AC(SMA) DO-214AC(SMA) DO-214AC(SMA)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
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