1. Features
•
Low-voltage and Standard-voltage Operation
– 2.7 (V
CC
= 2.7V to 5.5V)
– 1.8 (V
CC
= 1.8V to 5.5V)
User-selectable Internal Organization
– 2K: 256 x 8 or 128 x 16
– 4K: 512 x 8 or 256 x 16
Three-wire Serial Interface
Sequential Read Operation
2 MHz Clock Rate (5V)
Self-timed Write Cycle (10 ms Max)
High Reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
Automotive Devices Available
8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead Ultra Thin mini-MAP
(MLP 2x3), 8-lead Ultra Lead Frame Land Grid Array (ULA), 8-lead TSSOP and 8-ball
dBGA2 Packages
•
•
•
•
•
•
Three-wire
Serial
EEPROM
2K (256 x 8 or 128 x 16)
4K (512 x 8 or 256 x 16)
•
•
2. Description
The AT93C56A/66A provides 2048/4096 bits of serial electrically erasable program-
mable read-only memory (EEPROM) organized as 128/256 words of 16 bits each
(when the ORG pin is connected to VCC) and 256/512 words of 8 bits each (when the
ORG pin is tied to ground). The device is optimized for use in many industrial and
commercial applications where low-power and low-voltage operations are essential.
The AT93C56A/66A is available in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-
lead EIAJ SOIC,
8-lead Ultra Thin mini-MAP (MLP 2x3)
, 8-lead Ultra Lead Frame Land
Grid Array (ULA), 8-lead TSSOP, and 8-ball dBGA2 packages.
The AT93C56A/66A is enabled through the Chip Select pin (CS) and accessed via a
three-wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift
Clock (SK). Upon receiving a read instruction at DI, the address is decoded and the
data is clocked out serially on the data output pin DO. The write cycle is completely
self-timed and no separate erase cycle is required before write. The write cycle is only
enabled when the part is in the Erase/Write Enable State. When CS is brought “high”
following the initiation of a write cycle, the DO pin outputs the Ready/Busy status of
the part.
The AT93C56A/66A is available in 2.7V to 5.5V and 1.8V to 5.5V versions.
AT93C56A
AT93C66A
Not Recommended
for New Design.
Replaced by
AT93C56B or
AT93C66B.
3378O–SEEPR–11/09
Table 2-1.
Pin Name
CS
SK
DI
DO
GND
VCC
ORG
NC
Pin Configurations
Function
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
Power Supply
Internal Organization
No Connect
8-ball dBGA2
VCC
NC
ORG
GND
8
7
6
5
1
2
3
4
8-lead SOIC
CS
SK
DI
DO
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
CS
SK
DI
DO
Bottom view
8-lead Ultra Thin mini-MAP (MLP 2x3)
VCC
NC
ORG
GND
8
7
6
5
1
2
3
4
CS
SK
DI
DO
CS
SK
DI
DO
8-lead PDIP
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
Bottom view
8-lead Ultra Lead Frame
Land Grid Array (ULA)
VCC
NC
ORG
GND
8
7
6
5
1
2
3
4
CS
CS SK
DI
SK
DO
DI
DO
8-lead TSSOP
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
Bottom view
3. Absolute Maximum Ratings*
Operating Temperature
55C
to +125C
Storage Temperature
65C
to +150C
Voltage on Any Pin
with Respect to Ground
1.0V
to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only, and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
2
AT93C56A/66A
3378O–SEEPR–11/09
Table 3-1.
Pin Capacitance
(Note:)
Applicable over recommended operating range from T
A
= 25C, f = 1.0 MHz, V
CC
= +5.0V (unless otherwise noted)
Symbol
C
OUT
C
IN
Note:
Test Conditions
Output Capacitance (DO)
Input Capacitance (CS, SK, DI)
1. This parameter is characterized and is not 100% tested.
Max
5
5
Units
pF
pF
Conditions
V
OUT
= 0V
V
IN
= 0V
Table 3-2.
DC Characteristics
Applicable over recommended operating range from: T
AI
=
40C to +85C, V
CC
= +1.8V to +5.5V,
V
CC
= +1.8V to +5.5V (unless otherwise noted)
Symbol
V
CC1
V
CC2
V
CC3
I
CC
I
SB1
I
SB2
I
SB3
I
IL
I
OL
V
IL1
(Note:)
V
IH1
(Note:)
V
IL2
(Note:)
V
IH2
(Note:)
V
OL1
V
OH1
V
OL2
V
OH2
Note:
Parameter
Supply Voltage
Supply Voltage
Supply Voltage
READ at 1.0 MHz
Supply Current
Standby Current
Standby Current
Standby Current
Input Leakage
Output Leakage
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
V
CC
= 5.0V
V
CC
= 1.8V
V
CC
= 2.7V
V
CC
= 5.0V
V
IN
= 0V to V
CC
V
IN
= 0V to V
CC
2.7V
V
CC
5.5V
1.8V
V
CC
2.7V
2.7V
V
CC
5.5V
1.8V
V
CC
2.7V
I
OL
= 2.1 mA
I
OH
=
0.4
mA
I
OL
= 0.15 mA
I
OH
=
100
µA
V
CC
0.2
2.4
0.2
0.6
2.0
0.6
V
CC
x 0.7
WRITE at 1.0 MHz
CS = 0V
CS = 0V
CS = 0V
Test Condition
Min
1.8
2.7
4.5
0.5
0.5
0.4
6.0
10.0
0.1
0.1
Typ
Max
5.5
5.5
5.5
2.0
2.0
1.0
10.0
15.0
3.0
3.0
0.8
V
CC
+ 1
V
CC
x 0.3
V
CC
+ 1
0.4
Unit
V
V
V
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
1. V
IL
min and V
IH
max are reference only and are not tested.
4
AT93C56A/66A
3378O–SEEPR–11/09
Electronics Design Contest
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