TIP140F/141F/142F
TIP140F/141F/142F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
• Complement to TIP145F/146F/147F
• High DC Current Gain : h
FE
= 1000 @ V
CE
= 4V, I
C
= 5A (Min.)
• Industrial Use
1
TO-3PF
2.Collector
3.Emitter
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: TIP140F
: TIP141F
: TIP142F
Value
60
80
100
60
80
100
5
10
15
0.5
60
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
1.Base
Equivalent Circuit
C
B
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Emitter Voltage : TIP140F
: TIP141F
: TIP142F
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
R1
R2
E
R1
≅
8k
Ω
R
2
≅
0.12
k
Ω
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP140F
: TIP141F
: TIP142F
Collector Cut-off Current
: TIP140F
: TIP141F
: TIP142F
I
CBO
Collector Cut-off Current
: TIP140F
: TIP141F
: TIP142F
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
t
D
t
R
t
STG
t
F
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Delay Time
Rise Time
Storage Time
Fall Time
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 5A
V
CE
= 4V, I
C
= 10A
I
C
= 5A, I
B
= 10mA
I
C
= 10A, I
B
= 40mA
I
C
= 10A, I
B
= 40mA
V
CE
= 4V, I
C
= 10A
V
CC
= 30V, I
C
= 5A
I
B 1
= 20mA, I
B2
= -20mA
R
L
= 6Ω
0.15
0.55
2.5
2.5
1000
500
2
3
3.5
3
V
V
V
V
µs
µs
µs
µs
Rev. B1, December 2002
Test Condition
I
C
= 30mA, I
B
= 0
Min.
60
80
100
Typ.
Max.
Units
V
V
V
I
CEO
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
2
2
2
1
1
1
2
mA
mA
mA
mA
mA
mA
mA
©2002 Fairchild Semiconductor Corporation
TIP140F/141F/142F
Typical Characteristics
10
I
B
= 2000uA
9
I
C
[A], COLLECTOR CURRENT
I
B
= 1800uA
I
B
= 1600uA
I
B
= 1400uA
I
B
=
uA
1200
00uA
= 10
100k
I
B
I
B
= 800uA
I
B
= 600uA
V
CE
= 4V
10k
8
7
6
5
4
3
2
1
0
0
I
B
= 400uA
h
FE
, DC CURRENT GAIN
5
1k
I
B
= 200uA
100
1
2
3
4
10
0.1
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristics
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
1000
I
C
=500I
B
f=0.1MHz
V
BE
(sat)
1
V
CE
(sat)
C
ob
[pF], CAPACITANCE
100
0.1
0.01
0.1
10
1
10
100
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
100
100
I
C
[A], COLLECTOR CURRENT
10
P
C
[W], POWER DISSIPATION
80
60
DC
40
1
TIP140F
TIP141F
TIP142F
20
0.1
1
10
100
1000
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
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not intended to be an exhaustive list of all such trademarks.
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2
C™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
TI Technology Forum
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