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TIP140TU

Description
TRANS NPN DARL 60V 10A TO-3P
Categorysemiconductor    Discrete semiconductor   
File Size60KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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TIP140TU Overview

TRANS NPN DARL 60V 10A TO-3P

TIP140TU Parametric

Parameter NameAttribute value
Transistor typeNPN - Darlington
Current - Collector (Ic) (Maximum)10A
Voltage - collector-emitter breakdown (maximum)60V
Vce saturation value (maximum value) when different Ib,Ic3V @ 40mA,10A
Current - collector cutoff (maximum)2mA
DC current gain (hFE) at different Ic, Vce (minimum value)1000 @ 5A,4V
Power - Max80W
Frequency - Transition-
Operating temperature150°C(TJ)
Installation typeThrough hole
Package/casingTO-220-3
Supplier device packagingTO-220-3
TIP140F/141F/142F
TIP140F/141F/142F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
• Complement to TIP145F/146F/147F
• High DC Current Gain : h
FE
= 1000 @ V
CE
= 4V, I
C
= 5A (Min.)
• Industrial Use
1
TO-3PF
2.Collector
3.Emitter
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: TIP140F
: TIP141F
: TIP142F
Value
60
80
100
60
80
100
5
10
15
0.5
60
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
1.Base
Equivalent Circuit
C
B
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Emitter Voltage : TIP140F
: TIP141F
: TIP142F
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
R1
R2
E
R1
8k
R
2
0.12
k
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP140F
: TIP141F
: TIP142F
Collector Cut-off Current
: TIP140F
: TIP141F
: TIP142F
I
CBO
Collector Cut-off Current
: TIP140F
: TIP141F
: TIP142F
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
t
D
t
R
t
STG
t
F
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Delay Time
Rise Time
Storage Time
Fall Time
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 5A
V
CE
= 4V, I
C
= 10A
I
C
= 5A, I
B
= 10mA
I
C
= 10A, I
B
= 40mA
I
C
= 10A, I
B
= 40mA
V
CE
= 4V, I
C
= 10A
V
CC
= 30V, I
C
= 5A
I
B 1
= 20mA, I
B2
= -20mA
R
L
= 6Ω
0.15
0.55
2.5
2.5
1000
500
2
3
3.5
3
V
V
V
V
µs
µs
µs
µs
Rev. B1, December 2002
Test Condition
I
C
= 30mA, I
B
= 0
Min.
60
80
100
Typ.
Max.
Units
V
V
V
I
CEO
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
2
2
2
1
1
1
2
mA
mA
mA
mA
mA
mA
mA
©2002 Fairchild Semiconductor Corporation

TIP140TU Related Products

TIP140TU TIP142T TIP142FTU
Description TRANS NPN DARL 60V 10A TO-3P TRANS NPN DARL 100V 10A TO220-3 TRANS NPN DARL 100V 10A TO-3P
Transistor type NPN - Darlington - NPN - Darlington
Current - Collector (Ic) (Maximum) 10A - 10A
Voltage - collector-emitter breakdown (maximum) 60V - 100V
Vce saturation value (maximum value) when different Ib,Ic 3V @ 40mA,10A - 3V @ 40mA,10A
Current - collector cutoff (maximum) 2mA - 2mA
DC current gain (hFE) at different Ic, Vce (minimum value) 1000 @ 5A,4V - 1000 @ 5A,4V
Power - Max 80W - 125W
Operating temperature 150°C(TJ) - 150°C(TJ)
Installation type Through hole - Through hole
Package/casing TO-220-3 - TO-3P-3 whole package
Supplier device packaging TO-220-3 - TO-3PF-3

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