Datasheet
4.5V to 18V Input, 6.0A Integrated MOSFET
Single Synchronous Buck DC/DC Converter
BD9C601EFJ
General Description
BD9C601EFJ is a synchronous buck switching regulator
with built-in low on-resistance power MOSFETs. With
wide input voltage range. It is capable of providing current
of up to 6A. It is a current mode control DC/DC converter
and features high-speed transient response. Phase
compensation can also be set easily.
Features
■
Synchronous Single DC/DC Converter
■
Over Current Protection
■
Thermal Shutdown Protection
■
Under Voltage Lockout Protection
■
Short Circuit Protection
■
Fixed Soft Start Function
Applications
■
LCD TVs
■
Set-top Boxes
■
DVD/Blu-ray Disc Players/Recorders
■
Broadband Network and Communication Interface
■
Entertainment Devices
HTSOP-J8
Key Specifications
Input Voltage Range:
Reference Voltage:
Maximum Output Current:
Switching Frequency:
Pch MOSFET On Resistance:
Nch MOSFET On Resistance:
Standby Current:
Operating Temperature Range:
Package
HTSOP-J8
4.5V to 18.0V
0.8V ± 1%
6A(Max)
500kHz(Typ)
50mΩ(Typ)
35mΩ(Typ)
1μA (Typ)
-40°C to +85°C
W(Typ) x D(Typ) x H(Max)
4.90mm x 6.00mm x 1.00mm
Typical Application Circuit
V
IN
12V
10µF
Enable
0.1µF
EN
COMP AGND
PGND
FB
VIN
3.3µH
SW
22µF×2
V
OUT
3.3V
Figure 1. Application Circuit
〇Product
structure: silicon monolithic integrated circuit
〇This
product has no protection against radioactive rays.
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BD9C601EFJ
Pin Configuration
(TOP VIEW)
PGND
VIN
AGND
FB
1
2
3
4
Figure 2. Pin Assignment
8
7
6
5
SW
SW
EN
COMP
Pin Descriptions
Pin No.
1
Pin Name
PGND
Function
Ground pins for the output stage of the switching regulator.
2
VIN
This pins supply power to the control circuit and the output stage of the switching regulator.
Connecting a 10 µF and a 0.1µF ceramic capacitor is recommended.
3
AGND
Ground pin for the control circuit.
4
FB
An inverting input node for the gm error amplifier.
See page 14 for how to calculate the resistance of the output voltage setting.
An input pin for the switch current comparator and an output pin for the gm error amplifier. Connect a
frequency phase compensation component to this pin.
See page 14 for how to calculate the resistance and capacitance for phase compensation.
Turning this pin signal low (0.8 V or lower) forces the device to enter the shutdown mode. Turning this
pin signal high (2.0 V or higher) enables the device. This pin must be terminated.
5
COMP
6
7
EN
SW
8
-
E-Pad
Switch nodes. These pins are connected to the drain of Pch MOSFET and the drain of Nch MOSFET.
A backside heat dissipation pad. Connecting to the internal PCB ground plane by using multiple vias
provides excellent heat dissipation characteristics.
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BD9C601EFJ
Block Diagram
EN
6
VREF
OSC
SCP
OCP
UVLO
IBIAS
TSD
2
VIN
S
FB
4
ERR
LOGIC
7 SW
8
OUTPUT
COMP
5
SLOPE
PWM
R
PGND
1
SoftStart
3
AGND
Figure 3. Block Diagram
Absolute Maximum Ratings (Ta = 25C)
Parameter
Supply Voltage
SW Pin Voltage
EN Pin Voltage
Power Dissipation
(Note 1)
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
FB, COMP Pin Voltage
Symbol
V
IN
V
SW
V
EN
Pd
Topr
Tstg
Tjmax
V
LVPINS
Rating
20
20
20
3.76
-40 to +85
-55 to +150
150
7
Unit
V
V
V
W
°C
°C
°C
V
When mounted on a 70 mm x 70
mm x 1.6 mm 4-layer glass epoxy
board
Conditions
(Note1) Derate by 30.08 mW when operating above 25C.
Caution:
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Recommended Operating Range (Ta= -40°C to +85°C)
Parameter
Supply Voltage
Output Current
Output Voltage Setting Range
(Note 1) V
IN
x 0.075 ≥ 0.8 [V]
Symbol
V
IN
I
OUT
V
RANGE
Rating
Min
4.5
-
V
IN
× 0.075
(Note 1)
Typ
-
-
-
Max
18.0
6.0
V
IN
× 0.7
Unit
V
A
V
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BD9C601EFJ
Electrical Characteristics
(Ta = 25C, V
IN
= 12 V, V
EN
= 5 V unless otherwise specified)
Parameter
Circuit Current in Active
Circuit Current in Standby
FB Pin Voltage
FB Input Current
Switching Frequency
High Side FET On Resistance
Low Side FET On Resistance
Power MOS Leakage Current
Current Limit
Minimum Duty Ratio
UVLO Threshold
UVLO Hysteresis Voltage
EN High-Level Input Voltage
EN Low-Level Input Voltage
Soft Start Time
Symbol
I
Q_active
I
Q_stby
V
FB
I
FB
f
OSC
R
ONH
R
ONL
I
LSW
I
LIMIT
Min_duty
Limits
Min
-
-
0.792
-
450
-
-
-
6.5
-
3.8
-
2.0
-
0.5
Typ
1.5
1.0
0.800
0
500
50
35
0
-
-
4.1
0.3
-
-
1.0
Max
2.5
10.0
0.808
2
550
-
-
5
-
7.5
4.4
-
-
0.8
2.0
Unit
mA
μA
V
μA
kHz
mΩ
mΩ
μA
A
%
V
V
V
V
msec
Conditions
V
FB
= 0.75V, V
EN
= 5V
V
EN
= 0V
FB-COMP Short
(Voltage follower)
V
IN
= 12V , I
SW
= -1A
V
IN
= 12V , I
SW
= -1A
V
IN
= 18V , V
SW
= 18V
V
UVLO
V
UVLOHYS
V
ENH
V
ENL
T
SS
V
IN
Sweep up
(Note 1) V
FB
:FB Pin Voltage, V
EN
:EN Pin Voltage,
(Note 2) Current capability should not exceed Pd.
I
SW
: SW Pin Current
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BD9C601EFJ
Typical Performance Curves
100
90
80
70
110
100
90
Vout = 5.0V
Vout = 3.3V
Vout = 1.2V
80
Tc[
℃
]
Efficiency [%]
60
50
40
30
20
10
0
0
2
I
LOAD
[A]
70
60
50
40
30
20
4
6
0
1
2
3
ILOAD[A]
4
5
6
Figure 4. Efficiency
(VIN=12V, L=3.3µH /4.7µH / 4.7µH (Vout=1.2 / 3.3 / 5.0V))
Figure 5. T
C
vs I
LOAD
(VIN=12V, Vout=3.3V, L=3.3µH, Cout=44µF)
Vout(AC)
[20mV/div]
Vout(AC)
[20mV/div]
SW
[5V/div]
SW
[5V/div]
T - Time - 1µsec/div
Figure 6. Vout Ripple
(VIN=12V, Vout=3.3V, L=3.3µH, Cout=44µF, Iout=0A)
T - Time - 1µsec/div
Figure 7. Vout Ripple
(VIN=12V, Vout=3.3V, L=3.3µH, Cout=44µF, Iout=6A)
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