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FDI8441 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T
C
< 160 C, V
GS
= 10V)
Continuous (T
amb
=
Pulsed
Single Pulse Avalanche Energy
Power dissipation
Derate above 25
o
C
o
Parameter
Ratings
40
±20
80
26
See Figure 4
(Note 1)
947
300
2
-55 to 175
Units
V
V
A
mJ
W
W/
o
C
o
C
25
o
C,
V
GS
= 10V, with R
θJA
=
43
o
C/W)
Operating and Storage Temperature
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient, 1in
2
copper pad area
(Note 2)
0.5
62
43
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDI8441
Device
FDI8441
Package
TO-262AB
Reel Size
Tube
Tape Width
NA
Quantity
50 units
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250mA, V
GS
= 0V
V
DS
= 32V
V
GS
= 0V
V
GS
= ±20V
T
J
= 150°C
40
-
-
-
-
-
-
-
-
1
250
±100
V
μA
nA
On Characteristics
V
GS(th)
r
DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
DS
= V
GS
, I
D
= 250μA
I
D
= 80A, V
GS
= 10V
I
D
= 80A, V
GS
= 10V,
T
J
= 175°C
2
-
-
2.8
2.2
3.8
4
2.7
4.7
mΩ
V
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
GS
= 0.5V, f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 20V
I
D
= 35A
I
g
= 1mA
-
-
-
-
-
-
-
-
-
15000
1250
685
1.1
215
29
60
32
49
-
-
-
-
280
38
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
FDI8441 Rev.C0
2
www.fairchildsemi.com
FDI8441 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
1.2
POWER DISSIPATION MULIPLIER
I
D
, DRAIN CURRENT (A)
300
250
200
150
100
50
0
25
CURRENT LIMITED
BY PACKAGE
V
GS
= 10V
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE
(
o
C
)
175
50
75
100
125
150
175
T
C
, CASE TEMPERATURE
(
o
C
)
Figure 1.
Normalized Power Dissipation vs Case
Temperature
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
Figure 2.
Maximum Continuous Drain Current vs
Case Temperature
0.1
P
DM
t
1
0.01
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
SINGLE PULSE
1E-3
-5
10
10
-4
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
I
DM
,
PEAK CURRENT (A)
1000
100
SINGLE PULSE
10
-5
10
10
-4
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
Figure 4.
Peak Current Capability
FDI8441 Rev.C0
4
www.fairchildsemi.com
Analog electronics
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