BAV101/BAV103
Taiwan Semiconductor
200mA, 250V Switching Diode
FEATURES
●
●
●
●
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
Compliance to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
=100mA
T
J MAX
Package
Configuration
VALUE
200
250
4
1.00
200
UNIT
mA
V
A
V
°C
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MINI MELF
Single dice
MECHANICAL DATA
● Case: MINI MELF
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 0.06 (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Repetitive peak reverse voltage
Forward current
Non-repetitive peak forward
Pulse width = 1.0 s
surge current
Pulse width = 1.0 μs
Junction temperature range
Storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
PART NUMBER
250
200
1
4
-65 ~ 200
-65 ~ 200
UNIT
V
mA
A
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
300
UNIT
°C/W
1
Version:D1610
BAV101/BAV103
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
= 100mA, T
J
= 25°C
BAV101
V
R
=100V T
J
= 25°C
BAV103
V
R
=200V T
J
= 25°C
1 MHz, V
R
=0V
SYMBOL
V
F
TYP
MAX
1
100
100
4
UNIT
V
nA
nA
ρF
--
--
Reverse current @ rated V
R
per
diode
(2)
I
R
--
C
J
Junction capacitance
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
--
ORDERING INFORMATION
PART NO.
BAV10X
(Note 1&2)
PACKING
CODE
L0
G
L1
MINI MELF
2.5K / 7" Reel
PACKING CODE
SUFFIX
PACKAGE
PACKING
10K / 13" Reel
Notes:
1. "x" is device code is "1" & "3"
2. Whole series with green compound
EXAMPLE
EXAMPLE P/N
BAV101 L0G
PART NO.
BAV101
PACKING CODE
L0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2
Version:D1610
BAV101/BAV103
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Reverse Current VS. Junction Temperature
1000
100
10
1
0.1
0.01
0
40
80
120
160
200
0.1
0
0.4
0.8
1.2
1.6
2
V
F
- Forward Voltage (V)
1000
T
J
=25°C
100
Forward Current VS. Forward Voltage
IR - Reverse Current (uA)
Scattering Limit
I
F
- Forward Current (mA)
10
Scattering Limit
V
R
= V
RRM
1
T
j
- Junction Temperature (
°
C)
Differential Forward Resistance VS. Forward Current
1000
r
f
- Differential Forward Resistance
(Ohm)
100
10
1
0.1
1
10
100
I
F
- Forward Current (mA)
3
Version:D1610
BAV101/BAV103
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSION
MINI MELF
Unit(mm)
Min
3.30
1.40
0.20
Max
3.70
1.60
0.50
Unit(inch)
Min
0.130
0.055
0.008
Max
0.146
0.063
0.020
C
DIM.
A
B
C
B
A
SUGGEST PAD LAYOUT
DIM.
A
B
C
D
Unit(mm)
Typ.
1.25
2.00
2.50
5.00
Unit(inch)
Typ.
0.049
0.079
0.098
0.197
4
Version:D1610
BAV101/BAV103
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5
Version:D1610
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