BAS70 / -04 / -05 / -06
Taiwan Semiconductor
Small Signal Product
225mW SMD Switching Diode
FEATURES
- Low turn-on voltage
- Fast switching
- PN junction guard ring for transient and ESD protection
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260
o
C/10s
- Weight: 0.008grams (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating Junction Temperature
Storage Temperature Range
PARAMETER
Reverse breakdown voltage
Forward voltage
Reverse leakage current
Junction capacitance
Reverse revovery time
I
R
= 10
µA
tp=300µs , I
F
=1.0mA
tp＜300µs , I
F
=15mA
tp＜300µs , V
R
=50V
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 10 mA, I
RR
= 100
Ω,
I
RR
= 1 mA
(Note 1)
@ t
≦
1.0 s
(Note 1)
(Note 1)
SYMBOL
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
I
FSM
P
D
R
θJA
T
J
T
STG
SYMBOL
V
(BR)
V
F
I
R
C
J
t
rr
MIN
70
-
-
-
-
-
49
70
100
200
625
-55 to + 125
-55 to + 150
MAX
-
410
1000
100.00
2
5
V
mA
mA
mW
K/W
°C
°C
UNIT
V
mV
nA
pF
ns
70
V
VALUE
UNIT
Notes: 1. Valid provided that terminals are kept at ambient temperature
2. Test period
＜
3000
µs
Document Number: DS_S1404012
Version: E14
BAS70 / -04 / -05 / -06
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Fig.1 Power Derating Curve
100
Fig. 2 Maximum Non-Repetitve Peak Forward
Surge Current Per Leg
Peak Forward Surge Current (mA)
8.3 ms single half sine wave
(JEDEC Method)
P
D
- Power Dissipation (mW)
200
100
50
0
0
25
50
75
100
125
T
A
- Ambient Temperature (
o
C)
0
1
10
Numbers of Cycles at 60 Hz
100
Fig. 3 Typical Forward Characteristics
100
Instantaneous Forward Current (mA)
10000
I
R
- Instantaneous Reverse Current (nnA)
Fig. 4 Typical Reverse Characteristics
T
A
=125
°C
1000
100
10
1
T
A
= -40
°C
0.1
0
10
20
30
40
V
R
- Reverse Voltage (V)
T
A
=25
°C
T
A
=0
°C
T
A
=70
°C
10
1
T
A
= -40
°C
T
A
= 0
°C
T
A
= 25
°C
T
A
= 75
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
F
, Instantaneous Forward Voltage (V)
Fig. 5 Typical Total Capacitance VS. Reverse Voltage
100
Transient Thermal Impedance (
o
C/W)
2
Junction Capacitance (pF)
f=1.0MHz
Fig. 6 Typical Transient Thermal Characteristics
10
1
1
0
0
5
10
Reverse Voltage (V)
15
20
0.1
0.01
0.1
1
Pulse Duration (sec)
10
100
Document Number: DS_S1404012
Version: E14
BAS70 / -04 / -05 / -06
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
GREEN
PART NO.
MANUFACTURE
CODE
BAS70
BAS70-04
(Note)
BAS70-05
BAS70-06
RF
RF
G
G
SOT-23
SOT-23
3K / 7" Reel
3K / 7" Reel
75
76
PACKING
COMPOUND
CODE
CODE
RF
RF
G
G
SOT-23
SOT-23
3K / 7" Reel
3K / 7" Reel
73
74
PACKAGE
PACKING
MARKING
Note: Manufacture special control, if empty means no special control requirement.
EXAMPLE
GREEN
MANUFACTURE
PREFERRED P/N
PART NO.
CODE
CODE
BAS70 RFG
BAS70-B0 RFG
BAS70-D0 RFG
BAS70
BAS70
BAS70
B0
D0
RF
RF
RF
G
G
G
Green compound
Green compound
Green compound
PACKING CODE
COMPOUND
DESCRIPTION
Document Number: DS_S1404012
Version: E14
BAS70 / -04 / -05 / -06
Taiwan Semiconductor
Small Signal Product
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
DIM.
Min
A
B
C
D
E
F
G
H
2.70
1.10
0.30
1.78
2.10
0.89
Max
3.10
1.50
0.51
2.04
2.64
1.30
Min
0.106
0.043
0.012
0.070
0.083
0.035
Max
0.122
0.059
0.020
0.080
0.104
0.051
Unit (inch)
0.55 REF
0.1 REF
0.022 REF
0.004 REF
SUGGEST PAD LAYOUT
DIM.
Z
X
Y
C
E
Unit (mm)
Typ.
2.9
0.8
0.9
2.0
1.35
Unit (inch)
Typ.
0.114
0.031
0.035
0.079
0.053
Pin Configuration
BAS70
BAS70-04
BAS70-05
BAS70-06
Document Number: DS_S1404012
Version: E14
京公网安备 11010802033920号
EEWORLD
