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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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© Nexperia B.V. (year). All rights reserved.
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BAT54J
Schottky barrier single diode
Rev. 01 — 8 March 2007
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier single diode with an integrated guard ring for stress protection,
encapsulated in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device
(SMD) plastic package.
1.2 Features
I
I
I
I
Low forward voltage
Very small and flat lead SMD plastic package
Low capacitance
Flat leads: excellent coplanarity and improved thermal behavior
1.3 Applications
I
Voltage clamping
I
Line termination
I
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1 mA
[1]
Conditions
Min
-
-
-
Typ
-
-
-
Max
200
30
320
Unit
mA
V
mV
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
BAT54J
Schottky barrier single diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Symbol
1
2
sym001
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT54J
SC-90
Description
plastic surface-mounted package; 2 leads
Version
SOD323F
Type number
4. Marking
Table 4.
BAT54J
Marking codes
Marking code
AP
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
Parameter
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
Max
30
200
300
600
550
150
+150
+150
Unit
V
mA
mA
mA
mW
°C
°C
°C
t
p
≤
1 s;
δ ≤
0.5
square wave;
t
p
< 10 ms
T
amb
≤
25
°C
[1]
-
-
-
-
−65
−65
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm
2
.
BAT54J_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 8 March 2007
2 of 8
NXP Semiconductors
BAT54J
Schottky barrier single diode
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1][2]
Min
-
-
Typ
-
-
Max
230
55
Unit
K/W
K/W
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Reflow soldering is the only recommended soldering method.
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
[1]
Conditions
[1]
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
Max
240
320
400
500
800
2
10
Unit
mV
mV
mV
mV
mV
µA
pF
reverse current
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 25 V
V
R
= 1 V; f = 1 MHz
BAT54J_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 8 March 2007
3 of 8
NXP Semiconductors
BAT54J
Schottky barrier single diode
10
3
I
F
(mA)
10
2
(1) (2) (3)
msa892
10
3
I
R
(µA)
10
2
(2)
(1)
msa893
10
10
1
(1)
(2) (3)
1
(3)
10
−1
0
0.4
0.8
V
F
(V)
1.2
10
−1
0
10
20
V
R
(V)
30
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
msa891
15
C
d
(pF)
10
5
0
0
10
20
V
R
(V)
30
T
amb
= 25
°C;
f = 1 MHz
Fig 3. Diode capacitance as a function of reverse voltage; typical values
BAT54J_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 8 March 2007
4 of 8
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