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BZV55B8V2 L1G

Description
DIODE ZENER 8.2V 500MW MINI MELF
Categorysemiconductor    Discrete semiconductor   
File Size188KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZV55B8V2 L1G Overview

DIODE ZENER 8.2V 500MW MINI MELF

BZV55B8V2 L1G Parametric

Parameter NameAttribute value
Voltage - Zener (nominal) (Vz)8.2V
Tolerance±2%
Power - Max500mW
Impedance (max) (Zzt)7 Ohms
Current at different Vr - Reverse leakage current100nA @ 6.2V
Voltage at different If - Forward (Vf1V @ 100mA
Operating temperature-65°C ~ 175°C(TJ)
Installation typesurface mount
Package/casingDO-213AC, MINI-MELF, SOD-80
Supplier device packagingMini MELF
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
500mW, 2% Tolerance Zener Diodes
FEATURES
● Wide zener voltage range selection: 2.4V to 75V
● V
Z
tolerance selection of ± 2%
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
D
VF at I
F
=100mA
T
J
Max.
Package
Configuration
VALUE
2.4-75
5
500
1
175
UNIT
V
mA
mW
V
°C
APPLICATIONS
Low voltage stabilizers or voltage references
Adapters
Lighting application
On-board DC/DC converter
Mini-MELF
Single die
MECHANICAL DATA
Case: Mini-MELF
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 0.03g (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=100mA
Power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
D
T
J
T
STG
VALUE
1
500
-65 to +175
-65 to +175
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
TYP
300
UNIT
°C/W
1
Version: F1804
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