NTE16004 (PNP) & NTE16005 (NPN)
Silicon Complementary Transistors
High Current, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.057mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5°C/W
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO)
I
C
= 100mA, I
B
= 0
I
CEX
I
EBO
h
FE
V
CE(sat)
V
CE
= 100V, V
BE
= 1.5V
V
CE
= 70V, V
BE
= 1.5V, T
C
= +150°C
Emitter Cutoff Current
ON Characteristics
(Note 1)
DC Current Gain
I
C
= 500mA, V
CE
= 4V
I
C
= 1A, V
CE
= 2V
Collector–Emitter Saturation Voltage
NTE16004
NTE16005
Base–Emitter ON Voltage
Small–Signal Characteristics
Small–Signal Current Gain
h
fe
I
C
= 50mA, V
CE
= 4V, f = 10MHz
5
–
–
V
BE(on)
I
C
= 500mA, V
CE
= 4V
I
C
= 500mA, I
B
= 50mA
30
10
–
–
–
–
–
–
–
–
130
–
0.7
0.5
1.1
V
V
V
V
BE
= 7V, I
C
= 0
75
–
–
–
–
–
–
–
–
0.1
5.0
0.1
V
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
MCU
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