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BC848BR5G

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size198KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BC848BR5G Overview

Small Signal Bipolar Transistor,

BC848BR5G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC846A/B, BC847A/B/C, BC848A/B/C
Taiwan Semiconductor
Small Signal Product
200mW, NPN Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) under plate
- Pb free and RoHS compliant
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
SOT-23
MECHANICAL DATA
- Case: SOT- 23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 8mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power dissipation
BC846
Collector-Base Voltage
BC847
BC848
BC846
Collector-Emitter Voltage
BC847
BC848
BC846
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
BC846
Collector-Base Breakdown Voltage
BC847
BC848
BC846
Collector-Emitter Breakdown Voltage
BC847
BC848
BC846
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
BC846A, BC847A, BC848A
DC Current Gain
BC846B, BC847B, BC848B
BC847C, BC848C
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
Document Number: DS_S1404004
V
CE
= 5V
I
C
= 100mA
I
C
= 100mA
I
B
= 5mA
I
B
= 5mA
V
CE(sat)
V
BE(sat)
f
T
V
CE
= 5V
I
C
= 2mA
h
FE
BC847
BC848
V
CB
= 30V
V
EB
= 5 V
I
E
= 0
I
C
=0
I
CBO
I
EBO
I
E
= 1μA
I
C
= 0
V
(BR)EBO
I
C
= 10mA
I
B
= 0
V
(BR)CEO
I
C
= 10μA
I
E
= 0
V
(BR)CBO
SYMBOL
MIN
80
50
30
65
45
30
6
6
5
-
-
110
200
420
-
-
100
100
0.1
220
450
800
0.5
1.1
-
V
V
MHz
Version: H15
nA
μA
-
V
-
V
-
V
MAX
UNIT
BC847
BC848
I
C
T
J
, T
STG
V
EBO
V
CEO
V
CBO
SYMBOL
P
D
VALUE
200
80
50
30
65
45
30
6
6
5
0.1
-55 to +150
A
°C
V
V
UNIT
mW
V
I
C
= 10 mA f= 100MHz
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