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42CTQ030S

Description
20 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size255KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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42CTQ030S Overview

20 A, 30 V, SILICON, RECTIFIER DIODE

42CTQ030S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-263
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE; HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.57 V
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak forward current1100 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Bulletin PD-21019 rev. A 07/06
42CTQ030SPbF
42CTQ030-1PbF
SCHOTTKY RECTIFIER
40 Amp
I
F(AV)
= 40Amp
V
R
= 30V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5
μs
sine
V
F
T
J
@ 20 Apk, T
J
= 125°C
(per leg)
range
Description/ Features
Units
A
V
A
V
This center tap Schottky rectifier has been optimized for very
low forward voltage drop, with moderate leakage. The propri-
etary barrier technology allows for reliable operation up to
150° C junction temperature. Typical applications are in
switching power supplies, converters, free-wheeling diodes,
and reverse battery protection.
150° C T
J
operation
Center tap configuration
Very low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead- Free ("PbF" suffix)
Values
40
30
1100
0.38
- 55 to 150
°C
Case Styles
42CTQ030SPbF
42CTQ030-1PbF
Base
Common
Cathode
2
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
Anode
D
2
PAK
www.irf.com
TO-262
1
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