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PTMA210452EL V1 R250

Description
IC AMP RF LDMOS 45W H33265-8
CategoryTopical application    Wireless rf/communication   
File Size308KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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PTMA210452EL V1 R250 Overview

IC AMP RF LDMOS 45W H33265-8

PTMA210452EL V1 R250 Parametric

Parameter NameAttribute value
frequency1.9GHz ~ 2.2GHz
P1dB-
Gain28dB
Noise Figure-
RF typeW-CDMA
Voltage - Power28V
Current - Power450mA
Test frequency2.14GHz
Package/casingH-33265-8
Supplier device packagingH-33265-8
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
45 W, 1900 – 2200 MHz
Description
The PTMA210452FL and PTMA210452FL are wideband,
45-watt, 2-stage, LDMOS integrated amplifiers intended for use
in all typical modulation formats from 1900 to 2200 MHz. These
devices are offered in thermally-enhanced ceramic packages
with solder-friendly plating for cool and reliable operation.
PTMA210452FL
Package H-34265-8
PTMA210452EL
Package H-33265-8
Features
ue
in
nt
RF Characteristics
Characteristic
Input Return Loss
Gain
Drain Efficiency
Intermodulation Distortion, 2-channel WCDMA
V
DD
= 28 V, I
DQ1
= 200 mA (tuned for linearity), I
DQ2
= 450 mA (tuned for linearity & efficiency), P
OUT
= 3.2 W average,
ƒ1
= 2135 MHz,
ƒ2
= 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
di
Two-carrier WCDMA Measurements
(tested in Infineon test fixture)
sc
o
d
pr
od
uc
Symbol
IRL
G
ps
Designed for wide RF and modulation bandwidths and
low memory effects
Typical two-carrier WCDMA performance at 2140 MHz,
28 V
- Average output power = 3.2 W
- Linear Gain = 28 dB
- Efficiency = 10.5%
- IMD3 = –47 dBc
Typical two-tone performance, 2140 MHz, 28 V
- Output power (PEP) = 45 W at IM3 = –30 dBc
- Efficiency = 32%
Capable of handling 10:1 VSWR @ 28 V, 45 W (CW)
output power
Integrated ESD protection. Meets HBM Class 1B (mini-
mum), per JESD22-A114F
Thermally-enhanced packages, Pb-free and RoHS com-
pliant, with solder-friendly plating
Min
26.5
9
–43
ts
Typ
–16
28
10.5
–47
Max
–10
Unit
dB
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
*See Infineon distributor for future availability.
Rev. 08, 2015-01-14

PTMA210452EL V1 R250 Related Products

PTMA210452EL V1 R250 PTMA210452ELV1XWSA1 PTMA210452FLV1XWSA1 PTMA210452FL V1 R250
Description IC AMP RF LDMOS 45W H33265-8 IC AMP RF LDMOS 45W H-33265-8 Narrow Band High Power Amplifier, 1900MHz Min, 2200MHz Max, GREEN, CERAMIC, H-34265-8, 7 PIN IC AMP RF LDMOS 45W H34265-8
Gain 28dB 26.5 dB 26.5 dB 28dB

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