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8EWS10STRL

Description
DIODE GEN PURP 1KV 8A DPAK
CategoryDiscrete semiconductor    diode   
File Size199KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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8EWS10STRL Overview

DIODE GEN PURP 1KV 8A DPAK

8EWS10STRL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeTO-252AA
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
Humidity sensitivity level1
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin I2108 rev. G 08/00
SAFE
IR
Series
8EWS..S
SURFACE MOUNTABLE
INPUT RECTIFIER DIODE
Description/Features
The 8EWS..S rectifier
SAFE
IR
series has been
optimized for very low forward voltage drop, with
moderate leakage. The glass passivation technology
used has reliable operation up to 150° C junction
temperature.
The
High Reverse Voltage
range available allows
design of input stage primary rectification with
Outstanding Voltage Surge
capability.
Typical applications are in input rectification and these
products are designed to be used with International
Rectifier Switches and Output Rectifiers which are
available in identical package outlines.
V
F
< 1V @ 5A
I
FSM
= 200A
V
RRM
800 to 1200V
Output Current in Typical Applications
Applications
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz (140µm) copper
Aluminum IMS, R
thCA
= 15°C/W
Aluminum IMS with heatsink, R
thCA
= 5°C/W
T
A
= 55°C, T
J
= 125°C, footprint 300mm
2
Single-phase Bridge
1.2
2.5
5.5
Three-phase Bridge
1.6
2.8
6.5
Units
A
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal
waveform
V
RRM
Range (*)
I
FSM
V
F
T
J
@ 5A, T
J
= 25°C
Package Outline
Units
A
V
A
V
°C
8EWS..S
8
800 to 1200
200
1.0
- 55 to 150
TO-252AA (D-Pak)
(*)
for higher voltage up to 1600V contact factory
1
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