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2SD951

Description
Power Device - Power Transistors - Others
CategoryDiscrete semiconductor    The transistor   
File Size265KB,6 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

2SD951 Overview

Power Device - Power Transistors - Others

2SD951 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)3
JESD-609 codee0
Maximum operating temperature135 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)65 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

2SD951 Related Products

2SD951 2SD946AP 2SD946P 2SD950 2SD946R 2SD946Q 2SD946AR 2SD946AQ
Description Power Device - Power Transistors - Others Power Device - Power Transistors - Others Power Device - Power Transistors - Others Power Device - Power Transistors - Others Power Device - Power Transistors - Others Power Device - Power Transistors - Others Power Device - Power Transistors - Others Power Device - Power Transistors - Others
Is it Rohs certified? incompatible - - incompatible conform to conform to conform to conform to
Reach Compliance Code unknow - - unknow unknow unknow unknow unknow
Maximum collector current (IC) 3 A - - 3 A 1 A 1 A 1 A 1 A
Configuration Single - - Single DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 3 - - 2 8000 4000 8000 4000
Maximum operating temperature 135 °C - - 140 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN - - NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 65 W - - 42 W 1.2 W 1.2 W 1.2 W 1.2 W
surface mount NO - - NO NO NO NO NO
Base Number Matches 1 - - 1 1 1 1 1
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