KAI-08052
3296 (H) x 2472 (V)
Interline CCD Image Sensor
Descriptio
n
The KAI−08052 Image Sensor is an 8−megapixel, 4/3” optical
format CCD that provides increased Quantum Efficiency (particularly
for NIR wavelengths) compared to members of the standard 5.5
mm
family.
The sensor shares the same broad dynamic range, excellent imaging
performance, and flexible readout architecture as other members of
the 5.5
mm
pixel family. But QE at 820 nm has been approximately
doubled compared to existing devices, enabling enhanced sensitivity
without a corresponding decrease in the Modulation Transfer Function
(MTF) of the device.
The KAI−08052 is available with the Sparse Color Filter Pattern,
which provides a 2x improvement in light sensitivity compared to a
standard color Bayer part.
The KAI−08052 is drop−in compatible with the KAI−08051 Image
Sensor, simplifying adoption by camera manufacturers currently
working with the KAI−08051.
Table 1. GENERAL SPECIFICATIONS
Parameter
Architecture
Total Number of Pixels
Number of Effective Pixels
Number of Active Pixels
Pixel Size
Active Image Size
Aspect Ratio
Number of Outputs
Charge Capacity
Output Sensitivity
Quantum Efficiency
Pan (−ABA,
−QBA)
R, G, B (−FBA,
−QBA)
Read Noise (f = 40 MHz)
Dark Current
Photodiode / VCCD
Dark Current Doubling Temp.
Photodiode / VCCD
Dynamic Range
Charge Transfer Efficiency
Blooming Suppression
Smear
Image Lag
Maximum Pixel Clock Speed
Maximum Frame Rates
Quad / Dual / Single Output
Package
Cover Glass
Typical Value
Interline CCD; Progressive Scan
3364 (H) x 2520 (V)
3320 (H) x 2496 (V)
3296 (H) x 2472 (V)
5.5
mm
(H) x 5.5
mm
(V)
18.13 mm (H) x 13.60 mm (V)
22.66 mm (diag), 4/3” optical format
4:3
1, 2, or 4
20,000 electrons
35
mV/e
−
48%, 12%, 5% (535, 850, 920 nm)
42%, 41%, 38% (615, 535, 460 nm)
10 e
−
1 / 70 electrons/s
7°C / 9°C
66 dB
0.999999
> 300 X
−100
dB
< 10 electrons
40 MHz
16 / 8 / 4 fps
68 pin PGA
AR coated, 2 Sides or Clear Glass
www.onsemi.com
Figure 1. KAI−08052 CCD Image Sensor
Features
•
Increased QE, with 2x Improvement
•
•
•
•
•
at 820 nm
Bayer Color, Sparse Color,
and Monochrome Configurations
Progressive Scan Readout
Flexible Readout Architecture
High Sensitivity, Low Noise Architecture
Excellent Smear Performance
Applications
•
Scientific and Medical Imaging
•
Intelligent Transportation Systems
•
Machine Vision
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
NOTE: All parameters are specified at T = 40°C unless otherwise noted.
©
Semiconductor Components Industries, LLC, 2016
July, 2016
−
Rev. 0
1
Publication Order Number:
KAI−08052/D
KAI−08052
ORDERING INFORMATION
Table 2. ORDERING INFORMATION
Part Number
KAI−08052−ABA−JD−BA
Description
Monochrome, Telecentric Microlens, PGA Package,
Sealed Clear Cover Glass with AR coating (both sides),
Standard Grade
Monochrome, Telecentric Microlens, PGA Package,
Sealed Clear Cover Glass with AR coating (both sides),
Engineering Grade
Monochrome, Telecentric Microlens, PGA Package,
Taped Clear Cover Glass, no coatings, Standard Grade
Monochrome, Telecentric Microlens, PGA Package,
Taped Clear Cover Glass, no coatings, Engineering Grade
Gen2 Color (Bayer RGB), Telecentric Microlens, PGA Package,
Sealed Clear Cover Glass with AR coating (both sides),
Standard Grade
Gen2 Color (Bayer RGB), Telecentric Microlens, PGA Package,
Sealed Clear Cover Glass with AR coating (both sides),
Engineering Grade
Gen2 Color (Sparse CFA), Telecentric Microlens, PGA Package,
Sealed Clear Cover Glass with AR coating (both sides),
Standard Grade
Gen2 Color (Sparse CFA), Telecentric Microlens, PGA Package,
Sealed Clear Cover Glass with AR coating (both sides),
Engineering Grade
KAI−08052−QBA
Serial Number
KAI−08052−FBA
Serial Number
Marking Code
KAI−08052−ABA
Serial Number
KAI−08052−ABA−JD−AE
KAI−08052−ABA−JP−BA
KAI−08052−ABA−JP−AE
KAI−08052−FBA−JD−BA
KAI−08052−FBA−JD−AE
KAI−08052−QBA−JD−BA
KAI−08052−QBA−JD−AE
See the ON Semiconductor
Device Nomenclature
document (TND310/D) for a full description of the naming convention
used for image sensors. For reference documentation, including information on evaluation kits, please visit our web site at
www.onsemi.com.
www.onsemi.com
2
KAI−08052
DEVICE DESCRIPTION
Architecture
SUB
H2Bc
H2Sc
H1Bc
H1Sc
H2Bd
H2Sd
H1Bd
H1Sd
RDc
Rc
VDDc
VOUTc
GND
OGc
H2SLc
V1T
V2T
V3T
V4T
RDd
Rd
VDDd
VOUTd
GND
OGd
H2SLd
ESD
V1B
V2B
V3B
V4B
12 Buffer
12 Dark
1 Dummy
(Last VCCD Phase = V1
→
H1S)
1648
GND
OGa
H2SLa
Dark Reference Pixels
There are 12 dark reference rows at the top and 12 dark
rows at the bottom of the image sensor. The dark rows are not
entirely dark and so should not be used for a dark reference
level. Use the 22 dark columns on the left or right side of the
image sensor as a dark reference.
Under normal circumstances use only the center 20
columns of the 22 column dark reference due to potential
light leakage.
Dummy Pixels
Within each horizontal shift register there are 11 leading
additional shift phases. These pixels are designated as
dummy pixels and should not be used to determine a dark
reference level.
In addition, there is one dummy row of pixels at the top
and bottom of the image.
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
RDa
Ra
VDDa
VOUTa
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ
1 10 22 12
8
1648
1648
12 22 10 1
8
1 Dummy
12
12
V1T
V2T
V3T
V4T
DevID
22 12
HLOD
3296H x 2472V
5.5
mm
x 5.5
mm
Pixels
12 22
ESD
V1B
V2B
V3B
V4B
1 10 22 12
8
1648
12 22 10 1
8
RDb
Rb
VDDb
VOUTb
GND
OGb
H2SLb
HLOD
H2Bb
H2Sb
H1Bb
H1Sb
Figure 2. Block Diagram (Monochrome
−
No Filter Pattern)
Active Buffer Pixels
H2Ba
H2Sa
H1Ba
H1Sa
www.onsemi.com
3
SUB
12 unshielded pixels adjacent to any leading or trailing
dark reference regions are classified as active buffer pixels.
These pixels are light sensitive but are not tested for defects
and non−uniformities.
Image Acquisitio
n
An electronic representation of an image is formed when
incident photons falling on the sensor plane create
electron−hole pairs within the individual silicon
photodiodes. These photoelectrons are collected locally by
the formation of potential wells at each photosite. Below
photodiode saturation, the number of photoelectrons
collected at each pixel is linearly dependent upon light level
and exposure time and non−linearly dependent on
wavelength. When the photodiodes charge capacity is
reached, excess electrons are discharged into the substrate to
prevent blooming.
KAI−08052
ESD Protection
Adherence to the power−up and power−down sequence is
critical. Failure to follow the proper power−up and
Bayer Color Filter Pattern
SUB
H2Bc
H2Sc
H1Bc
H1Sc
power−down sequences may cause damage to the sensor.
See Power−Up and Power−Down Sequence section.
H2Bd
H2Sd
H1Bd
H1Sd
1 10 22 12
8
GND
OGc
H2SLc
V1T
V2T
V3T
V4T
ESD
V1B
V2B
V3B
V4B
1 10 22 12
8
GND
OGa
H2SLa
Sparse Color Filter Pattern
SUB
H2Bc
H2Sc
H1Bc
H1Sc
H2Bd
H2Sd
H1Bd
H1Sd
1 10 22 12
8
GND
OGc
H2SLc
V1T
V2T
V3T
V4T
ESD
V1B
V2B
V3B
V4B
1 10 22 12
8
GND
OGa
H2SLa
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
RDa
Ra
VDDa
VOUTa
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏ
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏ
RDc
Rc
VDDc
VOUTc
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
RDa
Ra
VDDa
VOUTa
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏ
1648
1648
12 22 10 1
8
1 Dummy
12
12
BG
G R
BG
G R
22 12
RDc
Rc
VDDc
VOUTc
HLOD
RDd
Rd
VDDd
VOUTd
GND
OGd
H2SLd
V1T
V2T
V3T
V4T
DevID
3296H x 2472V
5.5
mm
x 5.5
mm
Pixels
12 22
ESD
BG
G R
BG
G R
12 Buffer
12 Dark
1 Dummy
(Last VCCD Phase = V1
→
H1S)
1648
V1B
V2B
V3B
V4B
1648
12 22 10 1
8
RDb
Rb
VDDb
VOUTb
GND
OGb
H2SLb
HLOD
H2Bb
H2Sb
H1Bb
H1Sb
Figure 3. Bayer Color Filter Pattern
H2Ba
H2Sa
H1Ba
H1Sa
1648
SUB
HLOD
1648
12 22 10 1
8
RDd
Rd
VDDd
VOUTd
GND
OGd
H2SLd
V1T
V2T
V3T
V4T
DevID
1 Dummy
12
12
G
P
B
P
P
G
P
B
R
P
G
P
P
R
P
G
G
P
B
P
P
G
P
B
R
P
G
P
P
R
P
G
22 12
3296H x 2472V
5.5
mm
x 5.5
mm
Pixels
12 22
ESD
G
P
B
P
P
G
P
B
R
P
G
P
P
R
P
G
G
P
B
P
P
G
P
B
R
P
G
P
P
R
P
G
V1B
V2B
V3B
V4B
12 Buffer
12 Dark
1 Dummy
(Last VCCD Phase = V1
→
H1S)
1648
1648
12 22 10 1
8
RDb
Rb
VDDb
VOUTb
GND
OGb
H2SLb
HLOD
H2Bb
H2Sb
H1Bb
H1Sb
Figure 4. Sparse Color Filter Pattern
H2Ba
H2Sa
H1Ba
H1Sa
www.onsemi.com
4
SUB
KAI−08052
PHYSICAL DESCRIPTION
Pin Description and Device Orientation
67
V3T
65
V1T
63
VDDc
61
GND
59
Rc
57
H2SLc
55
H1Bc
53
H2Sc
51
N/C
49
H2Sd
47
H1Bd
45
H2SLd
43
Rd
41
GND
39
VDDd
37
V1T
35
V3T
68
ESD
66
V4T
64
V2T
62
VOUTc
60
RDc
58
OGc
56
H2Bc
54
H1Sc
52
SUB
50
H1Sd
48
H2Bd
46
OGd
44
RDd
42
VOUTd
40
V2T
38
V4T
36
DevID
Pixel
(1,1)
4
V4B
6
V2B
8
VOUTa
10
RDa
12
OGa
14
H2Ba
16
H1Sa
18
SUB
20
H1Sb
22
H2Bb
24
OGb
26
RDb
28
VOUTb
30
V2B
32
V4B
34
ESD
1
V3B
3
V1B
5
VDDa
7
GND
9
Ra
11
H2SLa
13
H1Ba
15
H2Sa
17
N/C
19
H2Sb
21
H1Bb
23
H2SLb
25
Rb
27
GND
29
VDDb
31
V1B
33
V3B
Figure 5. Package Pin Designations
−
Top View
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5
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