1SS120
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-167B (Z)
Rev. 2
Aug. 1995
Features
•
Low capacitance. (C = 3.0pF max)
•
Short reverse recovery time. (t
rr
= 3.5ns max)
•
Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
1SS120
Cathode band
Light Blue
Mark
1
Package Code
MHD
Outline
1
1
Cathode band
2
1. Cathode
2. Anode
1SS120
Absolute Maximum Ratings
(Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average forward current
Power dissipation
Junction temperature
Storage temperature
Note: Within 1s forward surge current.
Symbol
V
RM
V
R
I
FM
I
FSM
*
I
O
Pd
Tj
Tstg
Value
70
60
450
1
150
250
175
–65 to +175
Unit
V
V
mA
A
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Reverse current
Capacitance
Reverse recovery time
Symbol
V
F
I
R
C
t
rr
*
Min
—
—
—
—
Typ
—
—
—
—
Max
0.8
0.1
3.0
3.5
Unit
V
µA
pF
ns
Test Condition
I
F
= 10mA
V
R
= 60V
V
R
= 1V, f = 1MHz
I
F
= 10mA, V
R
= 6V, R
L
= 50Ω
Note: Reverse recovery time test circuit
DC
Supply
0.1µF
3kΩ
Sampling
Rin = 50Ω
Oscilloscope
Ro = 50Ω Pulse
Generator
Trigger
2
1SS120
10
–1
Forward current I
F
(A)
10
–3
10
–4
0
0.2
0.8
0.4 0.6
1.0
Forward voltage V
F
(V)
Ta =
125
°
C
Ta =
75
°
C
Ta =
25
°
C
Ta =
–25
°
C
10
–2
1.2
Fig.1 Forward current Vs. Forward voltage
–4
10
Ta = 125°C
10
Reverse current I
R
(A)
–5
Ta = 75°C
10
–6
10
–7
Ta = 25°C
10
–8
10
–9
0
60
20
40
80
Reverse voltage V
R
(V)
100
Fig.2 Reverse current Vs. Reverse voltage
3
1SS120
f = 1MHz
10
Capacitance C (pF)
1.0
10
–1
1.0
10
Reverse voltage V
R
(V)
10
2
Fig.3 Capacitance Vs. Reverse voltage
4
1SS120
Package Dimensions
Unit: mm
26.0 Min
2.4 Max
26.0 Min
φ
2.0
Max
1
φ
0.4
1
2
Cathode band (Light Blue)
1 Cathode
2 Anode
HITACHI Code
JEDEC Code
EIAJ Code
Weight (g)
MHD
DO-34
—
0.084
5
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