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25AA512-E/SN

Description
64K X 8 SPI BUS SERIAL EEPROM, PDSO8
Categorystorage   
File Size640KB,36 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

25AA512-E/SN Overview

64K X 8 SPI BUS SERIAL EEPROM, PDSO8

25AA512-E/SN Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature125 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage5.5 V
Minimum supply/operating voltage2.5 V
Rated supply voltage5 V
maximum clock frequency20 MHz
Processing package description3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
CraftsmanshipCMOS
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelAUTOMOTIVE
memory width8
organize64K X 8
storage density524288 deg
operating modeSYNCHRONOUS
Number of digits65536 words
Number of digits64K
Memory IC typeSPI BUS SERIAL EEPROM
serial parallelSERIAL
Maximum TWC of write cycle5 ms
25LC512
512 Kbit SPI Bus Serial EEPROM
Device Selection Table
Part Number
25LC512
V
CC
Range
2.5-5.5V
Page Size
128 Byte
Temp. Ranges
I,E
Packages
P, SN, SM, MF
Features:
• 20 MHz max. Clock Speed
• Byte and Page-level Write Operations:
- 128-byte page
- 5 ms max.
- No page or sector erase required
• Low-Power CMOS Technology:
- Max. Write Current: 5 mA at 5.5V, 20 MHz
- Read Current: 10 mA at 5.5V, 20 MHz
- Standby Current: 1A at 2.5V (Deep power-
down)
• Electronic Signature for Device ID
• Self-Timed Erase and Write cycles:
- Page Erase (5 ms, typical)
- Sector Erase (10 ms/sector, typical)
- Bulk Erase (10 ms, typical)
• Sector Write Protection (16K byte/sector):
- Protect none, 1/4, 1/2 or all of array
• Built-In Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• High Reliability:
- Endurance: 1 Million erase/write cycles
- Data Retention: >200 years
- ESD Protection: >4000V
• Temperature Ranges Supported:
- Industrial (I):
-40C to +85C
- Automotive (E):
-40°C to +125°C
• Pb-free and RoHS Compliant
Description:
The Microchip Technology Inc. 25LC512 is a 512 Kbit
serial EEPROM memory with byte-level and page-level
serial EEPROM functions. It also features Page, Sector
and Chip erase functions typically associated with
Flash-based products. These functions are not required
for byte or page write operations. The memory is
accessed via a simple Serial Peripheral Interface (SPI)
compatible serial bus. The bus signals required are a
clock input (SCK) plus separate data in (SI) and data out
(SO) lines. Access to the device is controlled by a Chip
Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
interrupts.
The 25LC512 is available in standard packages includ-
ing 8-lead PDIP, SOIC, and advanced 8-lead DFN
package. All packages are Pb-free and RoHS
compliant.
Package Types (not to scale)
DFN
25LC512
CS 1
SO 2
WP 3
V
SS
4
(MF)
8
7
6
5
V
CC
HOLD
SCK
SI
PDIP/SOIC/SOIJ
(P, SN, SM)
25LC512
8
7
6
5
CS
SO
WP
V
SS
1
2
3
4
V
CC
HOLD
SCK
SI
Pin Function Table
Name
CS
SO
WP
V
SS
SI
SCK
HOLD
V
CC
Function
Chip Select Input
Serial Data Output
Write-Protect
Ground
Serial Data Input
Serial Clock Input
Hold Input
Supply Voltage
2010 Microchip Technology Inc.
DS22065C-page 1
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