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M29W160EB80ZA3SE TR

Description
IC FLASH 16M PARALLEL 48TFBGA
Categorystorage   
File Size583KB,45 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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M29W160EB80ZA3SE TR Overview

IC FLASH 16M PARALLEL 48TFBGA

M29W160EB80ZA3SE TR Parametric

Parameter NameAttribute value
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage16Mb (2M x 8,1M x 16)
Write cycle time - words, pages80ns
interview time80ns
memory interfacein parallel
Voltage - Power2.7 V ~ 3.6 V
Operating temperature-40°C ~ 125°C(TA)
Installation typesurface mount
Package/casing48-TFBGA
Supplier device packaging48-TFBGA(6x8)
16Mb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
M29W160ET, M29W160EB
Features
• Supply voltage
– V
CC
= 2.7–3.6V (program, erase, read)
• Access times
– 70, 90ns
• Program time
– 10µs per byte/word (TYP)
• Memory organization
– 3 parameter and 31 main blocks
– 1 boot block (top or bottom location)
• Program/erase controller
– Embedded byte/word program algorithms
• Erase suspend and resume capability
– Read or program another block during an ERASE
SUSPEND operation
• UNLOCK BYPASS PROGRAM COMMAND
– Fast buffered/batch programming
• Temporary block unprotect mode
• Common Flash interface
– 64-bit security code
• Low power consumption: Standby and automatic
mode
• 100,000 PROGRAM/ERASE cycles per block
• Electronic signature
– Manufacturer code: 0020h
– Top device code M29W160ET: 22C4h
– Bottom device code M29W160EB: 2249h
• Packages
– 48-pin TSOP (N) 12mm x 20mm
– 48-ball TFBGA (ZA) 6mm x 8mm
– 64-ball FBGA (ZS) 11mm x 13mm
• Automotive grade parts available
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.

M29W160EB80ZA3SE TR Related Products

M29W160EB80ZA3SE TR M29W160EB90N1 M29W160EB70N3F TR M29W160ET70N3F TR M29W160ET7AZA6F TR M29W160EB90N6 M29W160EB7AZA6F TR
Description IC FLASH 16M PARALLEL 48TFBGA IC FLASH 16M PARALLEL 48TSOP IC FLASH 16M PARALLEL 48TSOP IC FLASH 16M PARALLEL 48TSOP IC FLASH 16M PARALLEL 48TFBGA IC FLASH 16M PARALLEL 48TSOP IC FLASH 16M PARALLEL 48TFBGA
technology FLASH - NOR FLASH - NOR FLASH - NOR FLASH - NOR FLASH - NOR CMOS FLASH - NOR
memory type non-volatile non-volatile non-volatile non-volatile non-volatile - non-volatile
memory format flash memory flash memory flash memory flash memory flash memory - flash memory
storage 16Mb (2M x 8,1M x 16) 16Mb (2M x 8,1M x 16) 16Mb (2M x 8,1M x 16) 16Mb (2M x 8,1M x 16) 16Mb (2M x 8,1M x 16) - 16Mb (2M x 8,1M x 16)
Write cycle time - words, pages 80ns 90ns 70ns 70ns 70ns - 70ns
interview time 80ns 90ns 70ns 70ns 70ns - 70ns
memory interface in parallel in parallel in parallel in parallel in parallel - in parallel
Voltage - Power 2.7 V ~ 3.6 V 2.7 V ~ 3.6 V 2.7 V ~ 3.6 V 2.7 V ~ 3.6 V 2.7 V ~ 3.6 V - 2.7 V ~ 3.6 V
Operating temperature -40°C ~ 125°C(TA) 0°C ~ 70°C(TA) -40°C ~ 125°C(TA) -40°C ~ 125°C(TA) -40°C ~ 85°C(TA) - -40°C ~ 85°C(TA)
Installation type surface mount surface mount surface mount surface mount surface mount - surface mount
Package/casing 48-TFBGA 48-TFSOP (0.724", 18.40mm wide) 48-TFSOP (0.724", 18.40mm wide) 48-TFSOP (0.724", 18.40mm wide) 48-TFBGA - 48-TFBGA
Supplier device packaging 48-TFBGA(6x8) 48-TSOP 48-TSOP 48-TSOP 48-TFBGA(6x8) - 48-TFBGA(6x8)

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