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K6F2016U4E-EF55

Description
Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48
Categorystorage   
File Size158KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

K6F2016U4E-EF55 Overview

Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48

K6F2016U4E-EF55 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeBGA
package instructionVFBGA, BGA48,6X8,30
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Is SamacsysN
Maximum access time55 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
JESD-609 codee0
length7 mm
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of terminals48
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum standby current0.000002 A
Minimum standby current1.5 V
Maximum slew rate0.021 mA
Maximum supply voltage (Vsup)3.3 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width6 mm
Base Number Matches1
K6F2016U4E Family
Document Title
CMOS SRAM
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0
1.0
Initial Draft
Finalize
- Change I
CC2
from 21 to 26mA for 55ns product.
- Change I
CC2
from 17 to 20mA for 70ns product.
- Remove "A1 Index Mark" of 48-TBGA package bottom side
Revise
- Changed 48-TBGA vertical dimension
E1(Typical) 0.55mm to 0.58mm
E2(Typical) 0.35mm to 0.32mm
Draft Date
February 21, 2001
April 30, 2001
Remark
Preliminary
Final
2.0
September 27, 2001 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 2.0
September 2001

K6F2016U4E-EF55 Related Products

K6F2016U4E-EF55 K6F2016U4E-EF70
Description Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48
Is it Rohs certified? incompatible incompatible
Maker SAMSUNG SAMSUNG
Parts packaging code BGA BGA
package instruction VFBGA, BGA48,6X8,30 VFBGA, BGA48,6X8,30
Contacts 48 48
Reach Compliance Code unknown compliant
ECCN code 3A991.B.2.A 3A991.B.2.A
Maximum access time 55 ns 70 ns
I/O type COMMON COMMON
JESD-30 code R-PBGA-B48 R-PBGA-B48
JESD-609 code e0 e0
length 7 mm 7 mm
memory density 2097152 bit 2097152 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
memory width 16 16
Number of functions 1 1
Number of terminals 48 48
word count 131072 words 131072 words
character code 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
organize 128KX16 128KX16
Output characteristics 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code VFBGA VFBGA
Encapsulate equivalent code BGA48,6X8,30 BGA48,6X8,30
Package shape RECTANGULAR RECTANGULAR
Package form GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
power supply 3 V 3 V
Certification status Not Qualified Not Qualified
Maximum seat height 1 mm 1 mm
Maximum standby current 0.000002 A 0.000002 A
Minimum standby current 1.5 V 1.5 V
Maximum slew rate 0.021 mA 0.017 mA
Maximum supply voltage (Vsup) 3.3 V 3.3 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V
surface mount YES YES
technology CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form BALL BALL
Terminal pitch 0.75 mm 0.75 mm
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
width 6 mm 6 mm
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