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PHX14NQ20T,127

Description
MOSFET N-CH 200V 7.6A TO220F
CategoryDiscrete semiconductor    The transistor   
File Size69KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PHX14NQ20T,127 Overview

MOSFET N-CH 200V 7.6A TO220F

PHX14NQ20T,127 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSFM
package instructionPLASTIC, TO-220, FPAK-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)70 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)7.6 A
Maximum drain current (ID)7.6 A
Maximum drain-source on-resistance0.23 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)30 W
Maximum pulsed drain current (IDM)30 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
PHX14NQ20T , PHF14NQ20T
FEATURES
’Trench’
technology
• Low on-state resistance
• Fast switching
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 200 V
I
D
= 7.6 A
g
R
DS(ON)
230 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching
applications.
The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
PIN
1
2
3
case
gate
drain
source
isolated
DESCRIPTION
SOT186A (FPAK)
case
SOT186 (FPAK)
case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 ˚C to 150˚C
T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ
T
hs
= 25 ˚C; V
GS
= 10 V
T
hs
= 100 ˚C; V
GS
= 10 V
T
hs
= 25 ˚C
T
hs
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
±
20
7.6
4.8
30
30
150
UNIT
V
V
V
A
A
A
W
˚C
November 2000
1
Rev 1.100

PHX14NQ20T,127 Related Products

PHX14NQ20T,127 PHX14NQ20T PHF14NQ20T
Description MOSFET N-CH 200V 7.6A TO220F TRANSISTOR 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, TO-220, FPAK-3, FET General Purpose Power TRANSISTOR 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, TO-220, FPAK-3, FET General Purpose Power
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
Parts packaging code SFM SFM SFM
package instruction PLASTIC, TO-220, FPAK-3 PLASTIC, TO-220, FPAK-3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 70 mJ 70 mJ 70 mJ
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V 200 V
Maximum drain current (Abs) (ID) 7.6 A 7.6 A 7.6 A
Maximum drain current (ID) 7.6 A 7.6 A 7.6 A
Maximum drain-source on-resistance 0.23 Ω 0.23 Ω 0.23 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 30 W 30 W 30 W
Maximum pulsed drain current (IDM) 30 A 30 A 30 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
JESD-609 code e3 e3 -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
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