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DMT3009LFVW-13

Description
MOSFET BVDSS: 25V 30V POWERDI333
Categorysemiconductor    Discrete semiconductor   
File Size496KB,7 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance
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DMT3009LFVW-13 Overview

MOSFET BVDSS: 25V 30V POWERDI333

DMT3009LFVW-13 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C12A(Ta),50A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)3.8V,10V
Rds On (maximum value) when different Id, Vgs11 milliohms @ 14.4A, 10V
Vgs (th) (maximum value) when different Id3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)12nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)823pF @ 15V
FET function-
Power dissipation (maximum)2.3W(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingPowerDI3333-8
Package/casing8-PowerVDFN
DMT3009LFVW
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8 (SWP) (Type UX)
Product Summary
ADVANCE INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
BV
DSS
R
DS(ON)
Max
11m @ V
GS
= 10V
30V
13m @ V
GS
= 4.5V
45A
I
D
Max
T
C
= +25°
C
50A
Features and Benefits
Low R
DS(ON)
– Ensures On State Losses Are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of The Board Area Occupied by SO-8
Enabling Smaller End Product
Wettable Flank for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMT3009LFVWQ)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI 3333-8 (SWP) (Type UX)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.03 grams (Approximate)
®
PowerDI3333-8 (SWP) (Type UX)
D
D
D
D
D
G
S
S
S
Pin1
G
S
Equivalent Circuit
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
DMT3009LFVW-7
DMT3009LFVW-13
Notes:
Case
PowerDI3333-8 (SWP) (Type UX)
PowerDI3333-8 (SWP) (Type UX)
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
YYWW
SH9= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
SH9
PowerDI is a registered trademark of Diodes Incorporated.
DMT3009LFVW
Document number: DS39728 Rev. 4 - 2
1 of 7
www.diodes.com
August 2018
© Diodes Incorporated

DMT3009LFVW-13 Related Products

DMT3009LFVW-13 DMT3009LFVW-7
Description MOSFET BVDSS: 25V 30V POWERDI333 MOSFET BVDSS: 25V 30V POWERDI333
FET type N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) at 25°C 12A(Ta),50A(Tc) 12A(Ta),50A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 3.8V,10V 3.8V,10V
Rds On (maximum value) when different Id, Vgs 11 milliohms @ 14.4A, 10V 11 milliohms @ 14.4A, 10V
Vgs (th) (maximum value) when different Id 3V @ 250µA 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 12nC @ 10V 12nC @ 10V
Vgs (maximum value) ±20V ±20V
Input capacitance (Ciss) at different Vds (maximum value) 823pF @ 15V 823pF @ 15V
Power dissipation (maximum) 2.3W(Ta) 2.3W(Ta)
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type surface mount surface mount
Supplier device packaging PowerDI3333-8 PowerDI3333-8
Package/casing 8-PowerVDFN 8-PowerVDFN
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